LS350 LS351 LS352
MONOLITHIC DUAL
PNP
TRANSISTORS
FEATURES
HIGH GAIN
TIGHT V
BE
MATCHING
HIGH f
T
@ 25 °C (unless otherwise stated)
I
C
Collector Current
10mA
h
FE
200 @ 10µA - 1mA
IV
BE1
-V
BE2
I=0.2mV TYP.
275 MHz TYP. @ 1mA
ABSOLUTE MAXIMUM RATINGS NOTE 1
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
-55° to +150°C
-55° to +150°C
ONE SIDE
250mW
2.3mW/°C
BOTH SIDES
500mW
4.3mW/°C
Top View
SOT-23 6 LEADS
Top View
TO-71 & TO-78
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
BV
CCO
h
FE
h
FE
h
FE
V
CE
(SAT)
I
CBO
I
EBO
C
OBO
C
C1C2
I
C1C2
f
T
NF
CHARACTERISTIC
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector to Collector Voltage
DC Current Gain
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
LS350 LS351 LS352
25
25
6.0
±25
100
100
100
0.5
0.2
0.2
2
2
1.0
200
3
45
45
6.0
±45
150
600
150
600
150
0.5
0.2
0.2
2
2
1.0
200
3
60
60
6.0
±80
200
600
200
600
200
0.5
0.2
0.2
2
2
1.0
200
3
MIN.
MIN.
MIN.
MIN.
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
V
nA
nA
pF
pF
µA
MHz
dB
I
C
= 1mA,
I
C
= 1mA
I
E
= 0
I
C
= 0
I
E
= 0
V
CC
= 0
V
CC
= NOTE 4
I
C
= 1mA
I
C
= 100µA
BW = 200Hz
f = 1KHz
V
CE
= 5V
V
CE
= 5V
R
G
= 10K
V
CE
= 5V
I
B
= 0.1mA
V
CB
= NOTE 3
V
EB
= 3V
V
CB
= 5V
I
C
= 100µA
V
CE
= 5V
UNITS
V
V
V
V
CONDITIONS
I
C
= 10µA
I
C
= 1mA
I
E
= 10µA
I
C
= ±1µA
I
C
= 10µA
I
E
= 0
I
B
= 0
I
C
= 0
NOTE 2
I
E
= 0 = I
B
= 0
V
CE
= 5V
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201119 06/15/2013 Rev#A5 ECN# LS350 LS351 LS352
LS350
MATCHING CHARACTERISTICS
SYMBOL
IV
BE1
-V
BE2
I
CHARACTERISTIC
Base Emitter Voltage Differential
SOT-23
LS350
1
5
I(V
BE1
-V
BE2
)I/°C Base Emitter Voltage Differential
Change with Temperature
II
B1
- I
B2
I
I (I
B1
- I
B2
)I/°C
h
FE1
/h
FE2
Base Current Differential
Base Current Differential
Change with Temperature
DC Current Gain Differential
10
5
5
TYP.
%
2
20
LS351 LS352
0.4
1.0
1
10
5
0.5
0.2
0.5
0.5
2
5
0.3
TYP.
MAX.
TYP.
MAX.
MAX.
MAX.
UNITS
mV
mV
µV/°C
µV/°C
nA
nA/°C
I
C
= 10 µA
I
C
= 10µA
I
C
= 10 µA,
I
C
= 10µA
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
T
A
= -55°C to +125°C
CONDITIONS
I
C
= 10 µA
V
CE
= 5V
T
A
= -55°C to +125°C
SOT-23
0.95
1
1.90
6
5
0.35
0.50
2.80
3.00
2
3
0.210
0.170
0.90
1.30
1.50
1.75
2.60
3.00
4
0.09
0.20
0.00
0.15
0.10
0.60
DIMENSIONS IN
MILLIMETERS
4
8
8
4
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired
2. The reverse base-to-emitter voltage must never exceed 6.0 volts; the reverse base-to-emitter current must never exceed 10 µA.
3. For LS350: V
CB
=20V; for LS351 & LS352: V
CB
=30V.
4. For LS351: V
CC
=±45V; for LS352: V
CC
=±80V; for LS350: V
CC
=±25V.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201119 06/15/2013 Rev#A5 ECN# LS350 LS351 LS352
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