®
2N3771
2N3772
HIGH POWER NPN SILICON TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The 2N3771, 2N3772 are silicon epitaxial-base
NPN transistors mounted in Jedec Jedec TO-3
metal case. They are intended for linear
amplifiers and inductive switching applications.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CEV
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
Parameter
2N3771
Collector-Emitter Voltage (I
E
= 0)
Collector-Emitter Voltage (V
BE
= -1.5V)
Collector-Base Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation at T
c
≤
25 C
Storage Temperature
o
Value
2N3772
60
80
100
7
20
30
5
15
150
-65 to 200
40
50
50
5
30
30
7.5
15
Unit
V
V
V
V
A
A
A
A
W
o
C
December 2000
1/4
2N3771/2N3772
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
1.17
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CEV
Parameter
Collector Cut-off
Current (V
BE
= -1.5V)
Collector Cut-off
Current (I
B
= 0)
Collector Cut-off
Current (I
E
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
for
2N3771
V
CB
= 50 V
for
2N3772
V
CB
= 100 V
for all
V
CB
= 30 V T
j
= 150
o
C
for
2N3771
for
2N3772
for
2N3771
for
2N3772
for
2N3771
for
2N3772
I
C
= 0.2 A
for
2N3771
for
2N3772
R
BE
= 100
Ω
I
C
= 0.2 A
for
2N3771
for
2N3772
I
C
= 0.2 A
for
2N3771
for
2N3772
for
2N3771
I
C
= 15 A
I
C
= 30 A
for
2N3772
I
C
= 10 A
I
C
= 20 A
I
B
= 1.5 A
I
B
= 6 A
I
B
= 1 A
I
B
= 4 A
V
CB
= 30 V
V
CB
= 50 V
V
CB
= 50 V
V
CB
= 100 V
V
CB
= 5 V
V
CB
= 7 V
40
60
50
80
45
70
2
4
1.4
4
2.7
2.7
15
5
15
5
f = 1 KHz
f = 50 KHz
40
0.2
6
MHz
A
60
Min.
Typ.
Max.
2
5
10
10
10
4
5
5
5
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
V
V
I
CEO
I
CBO
I
EBO
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CEV(sus)
∗
Collector-Emitter
Sustaining Voltage
(V
EB
= -1.5V)
V
CER(sus)
∗
Collector-Emitter
Sustaining Voltage
(R
BE
= 100
Ω)
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
V
BE
∗
Base-Emitter Voltage
for
2N3771
I
C
= 15 A
V
CE
= 4 V
for
2N3772
I
C
= 10 A
V
CE
= 4 A
for
2N3771
I
C
= 15 A
I
C
= 30 A
for
2N3772
I
C
= 10 A
I
C
= 20 A
I
C
= 1 A
I
C
= 1 A
V
CE
= 4 V
V
CE
= 4 V
V
CE
= 4 V
V
CE
= 4 V
V
CE
= 4 V
V
CE
= 4 V
h
FE
∗
DC Current Gain
60
h
FE
f
T
I
s/b
Small Signal Current
Gain
Transition frequency
Second Breakdown
Collector Current
V
CE
= 25 V t = 1 s (non repetitive)
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
2 %
2/4
2N3771/2N3772
TO-3 MECHANICAL DATA
mm
MIN.
A
B
C
D
E
G
N
P
R
U
V
11.00
0.97
1.50
8.32
19.00
10.70
16.50
25.00
4.00
38.50
30.00
TYP.
MAX.
13.10
1.15
1.65
8.92
20.00
11.10
17.20
26.00
4.09
39.30
30.30
MIN.
0.433
0.038
0.059
0.327
0.748
0.421
0.649
0.984
0.157
1.515
1.187
inch
TYP.
MAX.
0.516
0.045
0.065
0.351
0.787
0.437
0.677
1.023
0.161
1.547
1.193
DIM.
P
G
A
D
C
U
V
O
N
R
B
P003F
3/4
E
2N3771/2N3772
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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