STGB10NC60HD - STGF10NC60HD
STGP10NC60HD
N-channel 600V - 10A - TO-220 - D
2
PAK - TO-220FP
very fast PowerMESH™ IGBT
Features
Type
STGB10NC60HD
STGP10NC60HD
STGF10NC60HD
■
■
■
V
CES
600V
600V
600V
I
C
V
CE(sat)
(Max)@ 25°C @100°C
< 2.5V
< 2.5V
< 2.5V
10A
10A
6A
3
1
1
2
3
3
1
2
Low on-voltage drop (V
cesat
)
Low C
RES
/ C
IES
ratio (no cross-conduction
susceptibility)
Very soft ultra fast recovery antiparallel diode
D²PAK
TO-220FP
TO-220
Applications
■
■
■
High frequency motor controls
Smps and pfc in both hard switch and resonant
topologies
Motor drivers
Figure 1.
Internal schematic diagram
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs, with outstanding
performances. The suffix “H” identifies a family
optimized for high frequency applications in order
to achieve very high switching performances
(reduced tfall) manta in ing a low voltage drop.
Table 1.
Device summary
Marking
GB10NC60HD
GP10NC60HD
GF10NC60HD
Package
D²PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
Tube
Order codes
STGB10NC60HD
STGP10NC60HD
STGF10NC60HD
October 2007
Rev 4
1/17
www.st.com
17
Contents
STGB10NC60HD - STGP10NC60HD - STGF10NC60HD
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 7
3
4
5
6
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
STGB10NC60HD - STGP10NC60HD - STGF10NC60HD
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
CES
I
C(1)
I
C(1)
I
CL(2)
I
F
V
GE
P
TOT
V
ISO
T
j
Absolute maximum ratings
Value
Parameter
TO-220 / D²PAK
Collector-emitter voltage (V
GE
= 0)
Collector current (continuous) at T
C
= 25°C
Collector current (continuous) at T
C
= 100°C
Collector current (pulsed)
Diode RMS forward current at T
C
= 25°C
Gate-emitter voltage
Total dissipation at T
C
= 25°C
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;T
C
=25°C)
Operating junction temperature
65
--
– 55 to 150
20
10
40
10
±20
23
2500
600
9
6
TO-220FP
V
A
A
A
A
V
W
V
°C
Unit
1. Calculated according to the iterative formula:
T
–
T
JMAX
C
I
(
T
)
= -----------------------------------------------------------------------------------------------------
-
C C
R
×
V
(
T
,
I
)
THJ
–
C
CESAT
(
MAX
)
C C
2.
V
clamp
=80% of BVces, Tj=150°C, R
G
=10Ω, V
GE
=15V
Table 3.
Symbol
Rthj-case
Rthj-amb
Thermal resistance
Value
Parameter
TO-220 / D²PAK
Thermal resistance junction-case max
Thermal resistance junction-ambient max
1.9
62.5
TO-220FP
5
°C/W
°C/W
Unit
3/17
Electrical characteristics
STGB10NC60HD - STGP10NC60HD - STGF10NC60HD
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Collector-emitter
V
BR(CES)
breakdown voltage
(V
GE
= 0)
V
CE(sat)
V
GE(th)
I
CES
I
GES
g
fs
I
C
= 1mA
600
1.9
1.7
3.75
2.5
V
V
V
V
µA
mA
nA
S
Collector-emitter saturation V
GE
= 15V, I
C
= 5A
voltage
V
GE
= 15V, I
C
= 5A, Tc= 125°C
Gate threshold voltage
Collector cut-off current
(V
GE
= 0)
Gate-emitter leakage
current (V
CE
= 0)
Forward transconductance
V
CE
= V
GE
, I
C
= 250 µA
V
CE
= Max rating,T
C
= 25°C
V
CE
=Max rating,T
C
= 125°C
V
GE
= ±20V
V
CE
= 15V
,
I
C
= 5A
5.75
150
1
±100
3.5
Table 5.
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
V
CE
= 25V, f = 1MHz,
V
GE
= 0
V
CE
= 390V, I
C
= 5A,
V
GE
= 15V,
(see Figure 19)
Min.
Typ.
365
43
8.3
19.2
4.5
7
Max.
Unit
pF
pF
pF
nC
nC
nC
4/17
STGB10NC60HD - STGP10NC60HD - STGF10NC60HD
Electrical characteristics
Table 6.
Symbol
Switching on/off (inductive load)
Parameter
Test conditions
V
CC
= 390V, I
C
= 5A
Min.
Typ.
Max.
Unit
t
d(on)
t
r
(di/dt)
on
Turn-on delay time
Current rise time
Turn-on current slope
,
R
G
= 10Ω V
GE
= 15V,
Tj= 25°C
(see Figure 18)
(see Figure 20)
V
CC
= 390V, I
C
= 5A
14.2
5
1000
ns
ns
A/µs
t
d(on)
t
r
(di/dt)
on
Turn-on delay time
Current rise time
Turn-on current slope
,
R
G
= 10Ω V
GE
= 15V,
Tj=125°C
(see Figure 18)
(see Figure 20)
V
cc
= 390V, I
C
= 5A,
14
5
920
ns
ns
A/µs
t
r
(V
off
)
t
d
(
off
)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
,
R
GE
= 10Ω
V
GE
= 15V,T
J
=25°C
(see Figure 18)
(see Figure 20)
V
cc
= 390V, I
C
= 5A,
27
72
85
ns
ns
ns
t
r
(V
off
)
t
d
(
off
)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
R
GE
=10Ω V
GE
=15V,
,
Tj=125°C
(see Figure 18)
(see Figure 20)
50
108
139
ns
ns
ns
Table 7.
Symbol
E
on(1)
E
off(2)
E
ts
E
on(1)
E
off(2)
E
ts
Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Test conditions
V
CC
= 390V, I
C
= 5A
,
R
G
= 10Ω V
GE
=15V, Tj=25°C
(see Figure 18)
V
CC
= 390V, I
C
= 5A
,
R
G
= 10Ω V
GE
= 15V,
Tj= 125°C
(see Figure 18)
Min.
Typ.
31.8
95
126.8
61.8
173
234.8
Max.
Unit
µJ
µJ
µJ
µJ
µJ
µJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit in
Figure 18.
If the IGBT is offered
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
5/17
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