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BAW56GH

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size158KB,3 Pages
ManufacturerZOWIE Technology Corporation
Websitehttp://www.zowie.com.tw/
Download Datasheet Parametric View All

BAW56GH Overview

Rectifier Diode,

BAW56GH Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
ECCN codeEAR99
Base Number Matches1
Zowie Technology Corporation
Monolithic Dual Switching Diode
Common Anode
Lead free product
Halogen-free type
3
ANODE
CATHODE
1
2
2
CATHODE
3
BAW56GH
1
SOT-23
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
70
200
500
Unit
Vdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
o
Erate above 25 C
(1)
Symbol
T
A
=25 C
o
Max.
225
556
300
2.4
417
-55 to +150
o
Unit
mW
C/W
P
D
R
JA
o
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
P
D
R
JA
T
J,
T
STG
mW
mW /
o
C
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min.
Max.
Unit
o
OFF CHARACTERISTICS
Reverse Breakdown Voltage
( I
(BR)
= 100uAdc )
Reverse Voltage Leakage Current
( V
R
=25Vdc, T
J
=150
o
C )
( V
R
=70Vdc )
( V
R
=70Vdc, T
J
=150
o
C )
Diode Capacitance
( V
R
=0, f = 1.0 MH
Z
)
Forward Voltage
( I
F
= 1.0 mAdc )
( I
F
= 10 mAdc )
( I
F
= 50 mAdc )
( I
F
= 150 mAdc )
Reverse Recovery Time
( I
F
= I
R =
10 mAdc, I
R(REC) = 1.0 mAdc
) ( Figure 1 ) R
L
= 100
(1) FR-5=1.0 x 0.75 x 0.062 in.
(2) Alumina = 0.4 x 0.3 x 0.024in. 99.5% alumina.
V
(BR)
70
-
Vdc
I
R
-
-
-
-
-
-
-
-
-
30
2.5
50
2.0
715
855
1000
1250
6.0
uAdc
C
D
pF
V
F
mVdc
t
rr
nS
REV. 0
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