MBB100GS12A datasheet, PDF - EEWORLD Datasheet

MBB100GS12A: DescriptionInsulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE; CategoryDiscrete semiconductor The transistor; File Size308KB，2 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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MBB100GS12A Overview

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE

Parameter Name	Attribute value
Parts packaging code	MODULE
package instruction	,
Reach Compliance Code	unknown
Other features	HIGH SPEED, ULTRA SOFT FAST RECOVERY
Shell connection	ISOLATED
Maximum collector current (IC)	100 A
Collector-emitter maximum voltage	1200 V
Configuration	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Number of components	6
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal on time (ton)	350 ns
Base Number Matches	1

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