NXP Semiconductors
Product data sheet
NPN Darlington transistor
FEATURES
•
High current (max. 500 mA)
•
Low voltage (max. 30 V).
APPLICATIONS
•
High input impedance preamplifiers.
DESCRIPTION
NPN Darlington transistor in a SOT89 plastic package.
PNP complement: PXTA64.
MARKING
TYPE NUMBER
PXTA14
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PXTA14
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
MARKING CODE
(1)
*1N
3
PXTA14
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
2
TR1
TR2
3
2
1
1
sym087
Fig.1 Simplified outline (SOT89) and symbol.
VERSION
SOT89
2004 Dec 09
2
NXP Semiconductors
Product data sheet
NPN Darlington transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
Note
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
V
BE
= 0 V
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
PXTA14
MAX.
30
30
10
500
1
200
1.3
+150
150
+150
V
V
V
UNIT
mA
A
mA
W
°C
°C
°C
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for the SOT89 in the General Part of associated
Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
R
th(j-s)
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for the SOT89 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CES
I
EBO
h
FE
V
CEsat
V
BEsat
V
BEon
f
T
PARAMETER
collector-base cut-off current
collector-emitter cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0 A; V
CB
= 30 V
V
BE
= 0 V; V
CE
= 30 V
I
C
= 0 A; V
EB
= 10 V
I
C
= 10 mA; V
CE
= 5 V; (see Fig.2)
I
C
= 100 mA; V
CE
= 5 V; (see Fig.2)
collector-emitter saturation voltage I
C
= 100 mA; I
B
= 0.1 mA
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
I
C
= 100 mA; I
B
= 0.1 mA
I
C
= 100 mA; V
CE
= 5 V
I
C
= 30 mA; V
CE
= 5 V; f = 100 MHz
−
−
−
10 000
20 000
−
−
−
125
MIN.
MAX.
100
100
100
−
−
1.5
1.5
2
−
V
V
V
MHz
UNIT
nA
nA
nA
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to solder point
CONDITIONS
note 1
VALUE
96
16
UNIT
K/W
K/W
2004 Dec 09
3
NXP Semiconductors
Product data sheet
NPN Darlington transistor
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
PXTA14
SOT89
D
B
A
b
p3
E
H
E
L
p
1
2
b
p2
w
M
b
p1
e
1
e
3
c
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.6
1.4
bp1
0.48
0.35
bp2
0.53
0.40
bp3
1.8
1.4
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
e
3.0
e1
1.5
HE
4.25
3.75
Lp
1.2
0.8
w
0.13
OUTLINE
VERSION
SOT89
REFERENCES
IEC
JEDEC
TO-243
JEITA
SC-62
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
2004 Dec 09
5
Embedded System
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