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DISCRETE SEMICONDUCTORS
DATA SHEET
PMBTA56
PNP general purpose transistor
Product data sheet
Supersedes data of 1999 Apr 09
2004 Jan 09
NXP Semiconductors
Product data sheet
PNP general purpose transistor
FEATURES
•
High current (max. 500 mA)
•
Low voltage (max. 80 V).
APPLICATIONS
•
General purpose switching and amplification, e.g.
telephony and professional communication equipment.
DESCRIPTION
handbook, halfpage
PMBTA56
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: PMBTA06.
MARKING
TYPE NUMBER
PMBTA56
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
PMBTA56
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
*2G
Top view
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−80
−80
−5
−500
−1
−200
250
+150
150
+150
UNIT
V
V
V
mA
A
mA
mW
°C
°C
°C
2004 Jan 09
2
NXP Semiconductors
Product data sheet
PNP general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
f
T
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−80
V
I
C
= 0; V
EB
=
−5
V
I
C
=
−10
mA; V
CE
=
−1
V
I
C
=
−100
mA; V
CE
=
−1
V
collector-emitter saturation voltage I
C
=
−100
mA; I
B
=
−10
mA
base-emitter voltage
transition frequency
I
C
=
−100
mA; V
CE
=
−1
V
I
C
=
−100
mA; V
CE
=
−1
V;
f = 100 MHz
−
−
100
100
−
−
50
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
PMBTA56
UNIT
K/W
MAX.
−50
−50
−
−
−250
−1.2
−
UNIT
nA
nA
mV
V
MHz
2004 Jan 09
3
NXP Semiconductors
Product data sheet
PNP general purpose transistor
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
PMBTA56
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Jan 09
4