INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
BD376/378/380
DESCRIPTION
·DC
Current Gain-
: h
FE
= 20(Min)@ I
C
= -1A
·Complement
to Type BD375/377/379
APPLICATIONS
·Designed
for medium power linear and switching
applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BD376
V
CBO
Collector-Base Voltage
BD378
BD380
BD376
V
CEO
Collector-Emitter Voltage
BD378
BD380
V
EBO
I
C
I
CM
I
B
B
VALUE
-50
-75
-100
-45
-60
-80
-5
-2
-3
-1
25
150
-55~150
UNIT
V
V
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
V
A
A
A
W
℃
℃
P
C
T
J
T
stg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BD376
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
BD378
BD380
BD376
V
CBO
Collector-Base Voltage
BD378
BD380
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
BD376
I
CBO
Collector Cutoff Current
BD378
BD380
I
EBO
h
FE-1
h
FE-2
Emitter Cutoff Current
DC Current Gain
DC Current Gain
I
C
= -1A; I
B
= -0.1A
B
BD376/378/380
CONDITIONS
MIN
-45
TYP.
MAX
UNIT
I
C
= -100mA ; I
B
= 0
-60
-80
-50
V
I
C
= -0.1mA ; I
E
= 0
-75
-100
-1.0
-1.5
-2
-2
-2
-0.1
40
20
375
V
V
V
I
C
= -1A; V
CE
= -2V
V
CB
= -45V; I
E
= 0
V
CB
= -60V; I
E
= 0
V
CB
= -80V; I
E
= 0
V
EB
= -5V; I
C
= 0
I
C
= -0.15A ; V
CE
= -2V
I
C
= -1A; V
CE
= -2V
μA
mA
Switching Times
t
on
t
off
Turn-On Time
Turn-Off Time
0.05
0.5
μs
μs
I
C
= -0.5A; I
B1
= -I
B2
= -50mA;
V
CC
= -30V
h
FE-1
Classifications
6
40-100
10
63-160
16
100-250
25
150-375
isc Website：www.iscsemi.cn
2
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