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JANKCA1N4615

Description
Zener Diode, 2V V(Z), 5%, 0.25W, Silicon, Unidirectional, DIE-2
CategoryDiscrete semiconductor    diode   
File Size118KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANKCA1N4615 Overview

Zener Diode, 2V V(Z), 5%, 0.25W, Silicon, Unidirectional, DIE-2

JANKCA1N4615 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeDIE
package instructionS-XXUC-N2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresMETALLURGICALLY BONDED
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance1200 Ω
JESD-30 codeS-XXUC-N2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.25 W
Certification statusQualified
GuidelineMIL-19500/435F
Nominal reference voltage2 V
surface mountYES
technologyZENER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal locationUNSPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current0.25 mA
Base Number Matches1
• 1N4614-1THRU 1N4627-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/435
• LOW CURRENT OPERATION AT 250
µ
A
• LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
• DOUBLE PLUG CONSTRUCTION
• METALLURGICALLY BONDED
1N4614 thru 1N4627
and
1N4614-1 thru 1N4627-1
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ +50°C
Power Derating: 4 mW / °C above +50°C
Forward Voltage @ 200 mA: 1.1 Volts maximum
* ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise speci½ed.
JEDEC
TYPE
NUMBER
NOMINAL
ZENER
VOLTAGE
V @I
Z
ZT
(Note 1)
VOLTS
ZENER
TEST
CURRENT
I
ZT
MAXIMUM
ZENER
IMPEDANCE
Z
@I
ZT
ZT
(Note 2)
MAXIMUM REVERSE
LEAKAGE CURRENT
1
R
@V
R
MAXIMUM
DC ZENER
CURRENT
lZM
MAXIMUM
NOISE
DENSITY
ND
µ
A
250
250
250
250
250
250
250
250
250
250
250
250
250
250
OHMS
1200
1250
1300
1400
1500
1600
1650
1700
1650
1600
1550
1500
1400
1200
µ
A
7.5
5.0
4.0
2.0
1.0
0.8
7.5
7.5
5.0
4.0
10.0
10.0
10.0
10.0
VOLTS
1
1
1
1
1
1
1.5
2
2
2
3
3
4
5
mA
120
110
100
95
90
87
85
83
80
77
75
70
65
61
µ
V/
1
1
1
1
1
1
1
1
1
1
1
2
4
5
Hz
1N4614
1N4615
1N4616
1N4617
1N4618
1N4619
1N4620
1N4621
1N4622
1N4623
1N4624
1N4625
1N4626
1N4627
1.8
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL:
Copper clad steel.
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
250
°
C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (Z
OJX): 35
°
C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION:
ANY.
* JEDEC Registered Data.
NOTE 1
The JEDEC type numbers shown above have a Zener voltage tolerance of + 5% of
the nominal Zener voltage. Vz is measured with the device junction in thermal equilib-
rium at an ambient themperature of 25°C + 3°C. A “C” suffix denotes a + 2%
tolerance and a “D” suffix denotes a + 1% tolerance.
Zener impedance is derived by superimposing on l ZT A 60Hz rms a.c. current equal
to 10% of l ZT (25
µ
A a.c.)
NOTE 2
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
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