STTH8R06
Turbo 2 ultrafast high voltage rectifier
Features
■
■
■
■
■
Ultrafast switching
Low reverse recovery current
Low thermal resistance
Reduces switching losses
Package insulation voltage:
TO-220AC Ins: 2500 V rms
TO-220FPAC: 2000 V dc
K
K
A
A
K
TO-220AC
STTH8R06D
TO-220FPAC
STTH8R06FP
K
Description
The STTH8R06, which uses ST Turbo 2 600 V
technology, is specially suited as boost diode in
continuous mode power factor corrections and
hard switching conditions.
K
A
NC
A
K
NC
D
2
PAK
STTH8R06G
I
2
PAK
STTH8R06R
K
A
TO-220AC Insulated
STTH8R06DIRG
Table 1.
Device summary
I
F(AV)
V
RRM
I
RM
(typ)
T
j
V
F
(typ)
t
rr
(max)
8A
600 V
5.5 A
175°C
1.4 V
25 ns
April 2008
Rev 6
1/12
www.st.com
12
Characteristics
STTH8R06
1
Table 2.
Symbol
V
RRM
I
F(RMS)
Characteristics
Absolute ratings (limiting values)
Parameter
Repetitive peak reverse voltage
TO-220AC / TO-220FPAC / D
2
PAK / I
2
PAK
Forward current rms
TO-220AC Ins.
TO-220AC / D
2
PAK / I
2
PAK
I
F(AV)
Average forward current
δ
= 0.5
TO-220FPAC
TO-220AC Ins.
I
FSM
T
stg
T
j
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
Tc = 130 °C
Tc = 85 °C
Tc = 100 °C
tp = 10ms sinusoidal
80
-65 to + 175
175
A
°C
°C
8
A
24
Value
600
30
A
Unit
V
Table 3.
Symbol
Thermal resistance
Parameter
TO-220AC / D
2
PAK / I
2
PAK
Value (max)
2.2
4.6
3.8
°C/W
Unit
R
th(j-c)
Junction to case
TO-220FPAC
TO-220AC Ins.
Table 4.
Symbol
I
R
Static electrical characteristics
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
Forward voltage drop
T
j
= 25 °C
T
j
= 125 °C
V
R
= V
RRM
Min
Typ
Max
30
µA
35
400
2.9
I
F
= 8 A
V
1.4
1.8
Unit
V
F
To evaluate the conduction losses use the following equation: P = 1.16 x I
F(AV)
+ 0.08 I
F
2
(RMS)
Table 5.
Symbol
t
rr
I
RM
Dynamic characteristics
Parameter
Reverse recovery time
Reverse recovery current
I = 8 A, V
R
= 400 V,
T
j
= 125 °C
F
dI
F
/dt = -200 A/µs
I
F
= 8 A, dI
F
/dt = 64 A/µs
V
FR
= 1.1 x V
Fmax
T
j
= 25 °C
Test conditions
I
F
= 0.5 A, I
rr
= 0.25 A, I
R
=1 A
I
F
= 1 A, dI
F
/dt = -50 A/µs, V
R
= 30 V
5.5
0.3
150
150
5
T
j
= 25°C
nC
ns
V
Min
Typ Max Unit
25
ns
45
7.2
A
S factor Softness factor
Qrr
t
fr
V
FP
Reverse recovery charges
Forward recovery time
Forward recovery voltage
2/12
STTH8R06
Characteristics
Figure 1.
P(W)
24
22
20
18
16
14
12
10
8
6
4
2
0
0
Conduction losses versus
average current
Figure 2.
I
FM
(A)
100
Forward voltage drop versus
forward current
δ
= 0.05
δ
= 0.1
δ
= 0.2
90
δ
= 0.5
T
j
=125°C
(maximum values)
80
70
δ
=1
T
j
=125°C
(typical values)
60
50
40
30
T
j
= 25°C
(maximum values)
T
20
10
I
F(AV)
(A)
2
4
6
δ
=tp/T
8
tp
0
10
0
1
2
3
V
FM
(V)
4
5
6
7
Figure 3.
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220AC, I
2
PAK,
D
2
PAK)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Relative variation of thermal
impedance junction to case versus
pulse duration
(TO-220FPAC Insulated)
Z
th(j-c)
/R
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
1.E-01
Single pulse
Z
th(j-c)
/R
th(j-c)
0.3
T
T
0.2
0.1
Single pulse
t
p
(s)
δ
=tp/T
tp
0.0
1.E+00
1.E-03
1.E-02
t
p
(s)
1.E-01
δ
=tp/T
1.E+00
tp
1.E+01
Figure 5.
I
RM
(A)
22
20
18
16
14
12
10
V
R
=400V
T
j
=125°C
Peak reverse recovery current
versus dI
F
/dt (typical values)
Figure 6.
t
rr
(ns)
120
Reverse recovery time versus
dI
F
/dt (typical values)
V
R
=400V
T
j
=125°C
I
F
=2 x I
F(AV)
110
100
I
F
=I
F(AV)
90
80
I
F
=0.5 x I
F(AV)
70
60
I
F
=2 x I
F(AV)
I
F
=I
F(AV)
I
F
=0.5 x I
F(AV)
I
F
=0.25 x I
F(AV)
50
40
30
20
8
6
4
2
0
0
200
400
600
800
1000
dI
F
/dt(A/µs)
10
0
0
200
dI
F
/dt(A/µs)
400
600
800
1000
3/12
Characteristics
STTH8R06
Figure 7.
Q
rr
(nC)
350
V
R
=400V
T
j
=125°C
Reverse recovery charges
versus dI
F
/dt (typical values)
Figure 8.
S factor
0.70
0.65
0.60
I
F
≤
2 x I
F(AV)
V
R
=400V
T
j
=125°C
Softness factor versus
dI
F
/dt (typical values)
300
I
F
=2 x I
F(AV)
250
I
F
=I
F(AV)
0.55
0.50
0.45
200
I
F
=0.5 x I
F(AV)
0.40
0.35
0.30
150
100
50
0.25
0.20
dI
F
/dt(A/µs)
0
0
200
400
600
800
1000
0.15
0.10
0
200
dI
F
/dt(A/µs)
400
600
800
1000
Figure 9.
Relative variations of dynamic
parameters versus junction
temperature
Figure 10. Transient peak forward voltage
versus dI
F
/dt (typical values)
V
FP
(V)
12
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
50
75
100
125
I
RM
S factor
I
F
=I
F(AV)
V
R
=400V
Reference: T
j
=125°C
11
10
9
8
7
6
5
4
I
F
=I
F(AV)
T
j
=125°C
Q
RR
3
2
T
j
(°C)
1
0
0
100
dI
F
/dt(A/µs)
200
300
400
500
4/12
STTH8R06
Characteristics
Figure 11. Forward recovery time versus
dI
F
/dt (typical values)
t
fr
(ns)
160
140
120
100
80
60
40
20
I
F
=I
F(AV)
V
FR
=1.1 x V
F
max.
T
j
=125°C
Figure 12. Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
100
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
dI
F
/dt(A/µs)
0
0
100
200
300
400
500
10
1
10
V
R
(V)
100
1000
Figure 13. Thermal resistance junction to
ambient versus copper surface
under tab (epoxy FR4, e
CU
= 35 µm)
(D
2
PAK)
R
th(j-a)
(°C/W)
70
60
50
40
30
20
10
S(Cu)(cm²)
0
0
5
10
15
20
25
30
35
40
5/12
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