LX5511
InGaP HBT 2.3 – 2.5 GHz Power Amplifier
P
RODUCTION
D
ATA
S
HEET
DESCRIPTION
KEY FEATURES
The Microsemi LX5511 is a power
amplifier that is optimized for WLAN
applications in the 2.3GHz - 2.5GHz
frequency range. The LX5511 Power
Amplifier is implemented as a two-
stage monolithic microwave integrated
circuit (MMIC) with active bias and
output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor
(HBT)
IC
process
(MOCVD). With single low voltage
supply of 3.3V 26 dB power gain
between 2.3-2.5GHz, at a low
quiescent current of 90mA.
For 20dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
less than 3.0%, and consumes 170 mA
total DC current..
The LX5511 is available in a 16-pin
3mmx3mm micro-lead quad package
(MLPQ). The compact footprint, low
profile, and thermal capability of the
MLPQ package makes the LX5511 an
ideal solution for medium-gain power
amplifier requirements for IEEE
802.11b/g applications
▪
Advanced InGaP HBT
▪
2.3-2.5GHz Operation
▪
Single-Polarity 3.3V Supply
▪
Quiescent Current 90mA
▪
Power Gain 26 dB
▪
Total Current 150 mA for
Pout=18 dBm OFDM
▪
EVM<3 %, 2.4% Typical
54Mbps/64QAM
▪
Small Footprint: 3mmx3mm
▪
Height 0.9mm
APPLICATIONS
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▪
IEEE 802.11b/g
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
PRODUCT HIGHLIGHT
(YNNN : Trace code)
PACKAGE ORDER INFO
LQ
Plastic MLPQ
16-pin
RoHS Compliant / Pb free
LX5511
LX5511
LX5511LQ
Note: Available in Tape & Reel.
Append the letter “TR” to the part number.
(i.e. LX5511LQ-TR)
Copyright
©
2005
Rev. 1.1, 2019-06-27
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX5511
InGaP HBT 2.3 – 2.5 GHz Power Amplifier
P
RODUCTION
D
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ABSOLUTE MAXIMUM RATINGS
PACKAGE PIN OUT
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DC Supply Voltage, RF off ............................................................................. 5.5V
Collector Current.........................................................................................400mA
Total Power Dissipation ..................................................................................TBD
RF Input Power ........................................................................................+10 dBm
Operation Ambient Temperature .................................................. -40°C to +85°C
Storage Temperature ................................................................... -65°C to +150°C
Peak Package Solder reflow Temp. (40 second max exposure) ...... 260°C (+0,-5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal
.
THERMAL DATA
LQ P
ACKAGE
(Bottom View)
N.C. – Not Connected
LQ
Plastic MLPQ 16-Pin
A
MBIENT
,
JA
10C/W
50C/W
THERMAL RESISTANCE
-
JUNCTION TO
C
ASE
,
JC
THERMAL RESISTANCE
-
JUNCTION TO
RoHS / Pb-free 100% Matte Tin Lead Finish
Junction Temperature Calculation: T
J
= T
A
+ (P
D
×
JA
).
The
JA
numbers are guidelines for the thermal performance of the device/pc-board system. All of the
above assume no ambient airflow.
FUNCTIONAL PIN DESCRIPTION
Name
RF IN
VB1
VB2
VCC
RF OUT
VC1
VC2
DET
GND
RF input.
Bias current control voltage for the first stage.
Bias current control voltage for the second stage. The VB2 pin is connected with the first stage control voltage
(VB1) into a single reference voltage (referred to as Vref) through an external resistor bridge.
Supply voltage for the bias reference and control circuits. This pin can be combined with both VC1 and VC2 pins,
resulting in a single supply voltage (referred to as Vc).
RF output.
Power supply for first stage amplifier.
Power supply for second stage amplifier.
Power detector output.
The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power
amplifier.
Description
P
ACKAGE
D
ATA
P
ACKAGE
D
ATA
Copyright
©
2005
Rev. 1.1, 2019-06-27
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
LX5511
InGaP HBT 2.3 – 2.5 GHz Power Amplifier
P
RODUCTION
D
ATA
S
HEET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, the following specifications apply over the operating ambient temperature 0C
T
A
otherwise noted and the following test conditions: Vc = 3.3V, Vref = 2.94V, Icq = 90mA, T
A
= 25°C
Parameter
½
SECTION HEADER
Frequency Range
Power Gain at Pout = 20dBm
EVM at Pout < 20dBm
Total Current at Pout = 20dBm
ACPR complient power
Quiescent Current
Bias Control Reference Current
Small-Signal Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Second Harmonic
Third Harmonic
Total Current at Pout=23dBm
2
nd
side lobe at 23 dBm
Ramp-On Time
t
ON
Pout = 20dBm
Pout = 20dbm
1 Mbps DSSS
1 Mbps DSSS
10 ~ 90%
Icq
Iref
S21
ΔS21
ΔS21
Over 200MHz
0°C to +85°C
For Icq = 90mA
24
Ic_total
64QAM / 54Mbps
f
Gp
64QAM / 54Mbps, freq=2.412 GHz
2.3
70C except where
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Symbol
Test Conditions
Min
LX5511
Typ
Max
2.5
Units
GHz
dB
26
2.4
170
26
90
2
26
0.5
1
10
10
45
-50
-50
240
-52
120
29
3.0
%
mA
dBm
mA
mA
dB
dB
dB
dB
dB
dB
dBc
dBc
mA
dBc
ns
Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink.
E
LECTRICALS
E
LECTRICALS
Figure 1
– S-Parameter (VC=3.3V, Vref=2.94V, Icq=90 mA)
Copyright
©
2005
Rev. 1.1, 2019-06-27
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
LX5511
InGaP HBT 2.3 – 2.5 GHz Power Amplifier
P
RODUCTION
D
ATA
S
HEET
54 MBps 64QAM
2.412GHz
5
4.5
4
2.3GHz
2.5 GHz
-30
-35
-40
-45
-50
-55
-60
-65
1 MBps DSSS
2.412GHz
2.412GHz
2.3GHz
2.3GHz
2.5GHz
2.5GHz
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Microsemi
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EVM /[%]
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8
10
12
14
16
18
20
22
Output Pow er /[dBm ]
Side Lobe /[dBc]
3.5
0
2
4
6
8
10
12 14
16 18
20 22
24
Output Pow er /[dBm ]
Figure 2 –
EVM
Figure 3 –
Side Lobes
54 MBps 64QAM
2.412GHz
240
220
200
2.3GHz
2.5GHz
1 MBps DSSS
2.412GHz
280
260
240
2.3GHz
2.5GHz
Current_3V3 /[mA]
180
160
140
120
Current_3V3 /[mA]
0
2
4
6
8
10
12
14
16
18
20
22
220
200
180
160
140
120
100
80
Output Pow er /[dBm ]
100
80
0
2
4
6
8
10 12
14 16
18 20
22 24
Output Pow er /[dBm ]
Figure 4 & 5 –
Supply Current
Copyright
©
2005
Rev. 1.1, 2019-06-27
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
LX5511
InGaP HBT 2.3 – 2.5 GHz Power Amplifier
P
RODUCTION
D
ATA
S
HEET
54 MBps 64QAM
2.412GHz
0.8
2.3GHz
2.5GHz
1 MBps DSSS
2.412GHz
1.2
1
2.3GHz
2.5GHz
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Microsemi
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0.6
Detector /[V]
0.8
Detector /[V]
0
2
4
6
8
10
12
14
16
18
20
22
0.4
0.6
0.4
0.2
0.2
0
Output Pow er /[dBm ]
0
0
2
4
6
8
10
12 14
16
18
20 22
24
Output Pow er /[dBm ]
Figure 6 & 7 –
Detector Voltage
G
RAPHS
G
RAPHS
Copyright
©
2005
Rev. 1.1, 2019-06-27
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
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