74LX1G07
SINGLE BUFFER/DRIVER (OPEN DRAIN)
s
s
s
s
s
s
s
5V TOLERANT INPUTS
HIGH SPEED: t
PD
=4.2ns (MAX.) at V
CC
=
3.3V
LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at T
A
=25°C
POWER DOWN PROTECTION ON INPUTS
AND OUTPUTS
POWER DOWN PROTECTION ON INPUT
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 1.65V to 5.5V
(1.2V Data Retention)
IMPROVED LATCH-UP IMMUNITY
SOT23-5L
SOT323-5L
ORDER CODES
PACKAGE
SOT23-5L
SOT323-5L
T&R
74LX1G07STR
74LX1G07CTR
DESCRIPTION
The 74LX1G07 is a low voltage CMOS SINGLE
BUFFER (OPEN DRAIN)
fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on input and 0
to 7V can be accepted on input with no regard to
the supply voltage. This device can be used to
interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
October 2002
1/10
74LX1G07
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
1
2
4
3
5
SYMBOL
NC
1A
1Y
GND
V
CC
NAME AND FUNCTION
Not Connected
Data Input
Data Output
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
L
H
Z: High Impedance
Y
L
Z
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
V
O
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
T
L
Supply Voltage
DC Input Voltage
DC Output Voltage (V
CC
= 0V)
DC Output Voltage (High or Low State) (note 1)
DC Input Diode Current
DC Output Diode Current (note 2)
DC Output Current
DC Supply Current per Supply Pin
DC Ground Current per Supply Pin
Storage Temperature
Lead Temperature (10 sec)
Parameter
Value
-0.5 to +7.0
-0.5 to +7.0
-0.5 to +7.0
-0.5 to V
CC
+ 0.5
- 50
- 50
±
50
±
100
±
100
-65 to +150
300
Unit
V
V
V
V
mA
mA
mA
mA
mA
°C
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
2/10
74LX1G07
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
V
O
I
OL
I
OL
I
OL
I
OL
I
OL
T
op
dt/dv
Supply Voltage (note 1)
Input Voltage
Output Voltage (V
CC
= 0V)
Output Voltage (High or Low State)
High or Low Level Output Current (V
CC
= 4.5 to 5.5V)
High or Low Level Output Current (V
CC
= 3.0 to 3.6V)
High or Low Level Output Current (V
CC
= 2.7 to 3.0V)
High or Low Level Output Current (V
CC
= 2.3 to 2.7V)
High or Low Level Output Current (V
CC
= 1.65 to 2.3V)
Operating Temperqture
Input Rise and Fall Time (note 2)
Parameter
Value
1.65 to 5.5
0 to 5.5
0 to 5.5
0 to V
CC
+
32
+24
+
12
+
8
+
4
-55 to 125
0 to 10
Unit
V
V
V
V
mA
mA
mA
mA
mA
°C
ns/V
1) Truth Table guaranteed: 1.2V to 3.6V
2) V
IN
from 0.8V to 2V at V
CC
= 3.0V
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
CC
(V)
1.65 to 1.95
2.3 to 2.7
3.0 to 5.5
V
IL
Low Level Input
Voltage
1.65 to 1.95
2.3 to 2.7
3.0 to 5.5
V
OL
Low Level Output
Voltage
1.65 to 4.5
1.65
2.3
3.0
4.5
I
OZ
High Impedance
Output Leakage
Current
Input Leakage
Current
Power Off Leakage
Current
Quiescent Supply
Current
3.6
1.65 to 5.5
0
1.65 to 5.5
3.6
I
O
=100
µA
I
O
=4 mA
I
O
=8 mA
I
O
=16 mA
I
O
=24 mA
I
O
=32 mA
V
I
= 0 to 5.5V
V
I
= 0 to 5.5V
V
I
or V
O
= 5.5V
V
I
= V
CC
or GND
V
I
or V
O
= 3.6 to 5.5V
-40 to 85 °C
Min.
0.75V
CC
0.7V
CC
0.7V
CC
0.25V
CC
0.3V
CC
0.3V
CC
0.1
0.45
0.3
0.4
0.55
0.55
±
10
±
10
10
10
±
10
Max.
Value
-55 to 125 °C
Min.
0.75V
CC
0.7V
CC
0.7V
CC
0.25V
CC
0.3V
CC
0.3V
CC
0.1
0.45
0.3
0.4
0.55
0.55
±
10
±
10
10
10
±
10
µA
µA
µA
µA
V
V
V
Max.
Unit
V
IH
High Level Input
Voltage
I
I
I
off
I
CC
3/10
74LX1G07
AC ELECTRICAL CHARACTERISTICS
Test Condition
Symbol
Parameter
V
CC
(V)
1.65 to 1.95
2.3 to 2.7
2.7
3.0 to 3.6
4.5 to 5.5
1.65 to 1.95
2.3 to 2.7
2.7
3.0 to 3.6
4.5 to 5.5
C
L
(pF)
30
30
50
50
50
30
30
50
50
50
R
1
(Ω)
1000
500
500
500
500
1000
500
500
500
500
t
s
=
t
r
(ns)
2.0
2.0
2.5
2.5
2.5
2.0
2.0
2.5
2.5
2.5
-40 to 85 °C
Min.
1.8
1.2
1
0.8
0.5
1.8
1.2
1
0.8
0.5
Max.
8.3
5.5
5
4.2
3.5
8.3
5.5
5
4.2
3.5
Value
-55 to 125 °C
Min.
1.8
1.2
1
0.8
0.5
1.8
1.2
1
0.8
0.5
Max.
8.3
5.5
5
4.2
3.5
8.3
5.5
5
4.2
3.5
Unit
t
PLZ
Propagation Delay
Time
ns
t
PZL
Propagation Delay
Time
ns
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
V
CC
(V)
3.3
3.3
1.8
2.5
3.3
V
IN
= 0 or V
CC
V
IN
= 0 or V
CC
f
IN
= 10MHz
Value
T
A
= 25 °C
Min.
Typ.
2.5
4
16
18
20
Max.
pF
pF
pF
Unit
C
IN
C
OUT
C
PD
Input Capacitance
Output Capacitance
Power Dissipation Capacitance
(note 1)
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
4/10
74LX1G07
TEST CIRCUIT
R
T
= Z
OUT
of pulse generator (typically 50Ω)
TEST CIRCUIT AND WAVEFORM SYMBOL VALUE
Symbol
1.65 to 1.95V
C
L
R1=R
L
V
IH
V
M
t
r
= t
f
30pF
1000Ω
V
CC
V
CC
/2
<2.0ns
V
CC
2.3 to 2.7V
30pF/50pF
500Ω
V
CC
V
CC
/2
<2.0ns
2.7 to 5.5V
50pF
500Ω
V
CC
V
CC
/2
<2.5ns
WAVEFORM: PROPAGATION DELAY
(f=1MHz; 50% duty cycle)
5/10
Embedded System
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