EN29LV320BT-70TIP datasheet, PDF

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EN29LV320BT-70TIP: DescriptionFlash, 2MX16, 70ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, TSOP1-48; Categorystorage storage; File Size395KB，49 Pages; ManufacturerEon; Websitehttp://www.essi.com.tw/; Environmental Compliance

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EN29LV320BT-70TIP Overview

Flash, 2MX16, 70ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, TSOP1-48

EN29LV320BT-70TIP Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TSOP1
package instruction	TSOP1, TSSOP48,.8,20
Contacts	48
Reach Compliance Code	unknown
ECCN code	3A991.B.1.A
Maximum access time	70 ns
Other features	TOP BOOT SECTOR
Spare memory width	8
startup block	TOP
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PDSO-G48
length	18.4 mm
memory density	33554432 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of departments/size	8,63
Number of terminals	48
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP48,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3/3.3 V
Programming voltage	2.7 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.2 mm
Department size	8K,64K
Maximum standby current	0.000005 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
type	NOR TYPE
width	12 mm
Base Number Matches	1

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EN29LV320B

32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory

Boot Sector Flash Memory, CMOS 3.0 Volt-only

FEATURES

•

Single power supply operation

- Full voltage range: 2.7 to 3.6 volts read and

write operations

•

High performance

- Access times as fast as 70 ns

•

Low power consumption (typical values at 5

MHz)

- 9 mA typical active read current

- 20 mA typical program/erase current

- Less than 1

μA

current in standby or automatic

sleep mode

•

JEDEC Standard compatible

•

Standard DATA# polling and toggle bits

feature

•

Erase Suspend / Resume modes:

Read and program another Sector during

Erase Suspend Mode

•

Support JEDEC Common Flash Interface

(CFI).

•

Low Vcc write inhibit < 2.5V

•

Minimum 100K program/erase endurance

cycles

•

RESET# hardware reset pin

- Hardware method to reset the device to read

mode

•

WP#/ACC input pin

- Write Protect (WP#) function allows

protection of outermost two boot sectors,

regardless of sector protect status

- Acceleration (ACC) function provides

accelerated program times

•

Package Options

- 48-pin TSOP (Type 1)

- 48 ball 6mm x 8mm TFBGA

•

Industrial Temperature Range

•

Flexible Sector Architecture:

- Eight 8-Kbyte sectors, sixty-three 64k-byte

sectors

- 8-Kbyte sectors for Top or Bottom boot

- Sector/Sector Group protection:

Hardware locking of sectors to prevent

program or erase operations within individual

sectors

Additionally, temporary Sector Group

Unprotect allows code changes in previously

locked sectors

•

High performance program/erase speed

Word program time: 8µs typical

Sector erase time: 100ms typical

Chip erase time: 8s typical

GENERAL DESCRIPTION

The EN29LV320B is a 32-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 4,194,304 bytes or 2.097,152 words. Any word can be programmed typically in 8µs.

The EN29LV320B features 3.0V voltage read and write operation, with access times as fast as 70ns

to eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29LV320B has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)

controls, which eliminate bus contention issues. This device is designed to allow either single Sector

or full Chip erase operation, where each Sector can be individually protected against program/erase

operations or temporarily unprotected to erase or program. The device can sustain a minimum of

100K program/erase cycles on each Sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. C, Issue Date: 2009/10/28

www.eonssi.com

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