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PESD9X5.0L; PESD9X7.0L
Unidirectional ESD protection diodes
Rev. 1 — 16 December 2010
Product data sheet
1. Product profile
1.1 General description
Single unidirectional ElectroStatic Discharge (ESD) protection diodes in a SOD882
leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect
one signal line from the damage caused by ESD and other transients.
1.2 Features and benefits
ESD protection of one line
Max. peak pulse power: P
PP
= 150 W
Low clamping voltage: V
CL
= 10 V
Ultra low leakage current: I
RM
= 3 nA
AEC-Q101 qualified
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 10 A
Ultra small SMD plastic package
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Portable electronics
Communication systems
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
RWM
Parameter
reverse standoff voltage
PESD9X5.0L
PESD9X7.0L
C
d
diode capacitance
PESD9X5.0L
PESD9X7.0L
f = 1 MHz; V
R
= 0 V
-
-
68
62
100
100
pF
pF
-
-
-
-
5.0
7.0
V
V
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
PESD9X5.0L; PESD9X7.0L
Unidirectional ESD protection diodes
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
1
2
006aaa152
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD9X5.0L
PESD9X7.0L
-
Description
leadless ultra small plastic package; 2 terminals;
body 1.0
×
0.6
×
0.5 mm
Version
SOD882
Type number
4. Marking
Table 4.
Marking codes
Marking code
AS
AT
Type number
PESD9X5.0L
PESD9X7.0L
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PP
I
PP
T
j
T
amb
T
stg
[1]
[2]
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
μs
t
p
= 8/20
μs
[1][2]
[1][2]
Min
-
-
-
−55
−65
Max
150
10
150
+150
+150
Unit
W
A
°C
°C
°C
Non-repetitive current pulse 8/20
μs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to pin 2.
PESD9XXL_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 16 December 2010
2 of 14
NXP Semiconductors
PESD9X5.0L; PESD9X7.0L
Unidirectional ESD protection diodes
Table 6.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
ESD
Parameter
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
machine model
MIL-STD-883
(human body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to pin 2.
[1][2]
Min
-
-
-
Max
30
400
10
Unit
kV
V
kV
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
μs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD9XXL_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 16 December 2010
3 of 14
NXP Semiconductors
PESD9X5.0L; PESD9X7.0L
Unidirectional ESD protection diodes
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
V
RWM
reverse standoff voltage
PESD9X5.0L
PESD9X7.0L
I
RM
reverse leakage current
PESD9X5.0L
PESD9X7.0L
V
BR
breakdown voltage
PESD9X5.0L
PESD9X7.0L
C
d
diode capacitance
PESD9X5.0L
PESD9X7.0L
V
CL
clamping voltage
PESD9X5.0L
PESD9X7.0L
r
dyn
[1]
[2]
[3]
[1][2]
Conditions
Min
-
-
Typ
-
-
3
35
-
-
Max
5.0
7.0
100
500
-
-
Unit
V
V
nA
nA
V
V
V
RWM
= 5.0 V
V
RWM
= 7.0 V
I
R
= 1 mA
-
-
6.2
7.5
f = 1 MHz;
V
R
= 0 V
-
-
I
PP
= 10 A
I
PP
= 1 A
I
PP
= 10 A
I
PP
= 1 A
I
R
= 10 A
[2][3]
68
62
-
-
-
-
0.4
100
100
18
10
18
11
-
pF
pF
V
V
V
V
Ω
-
-
-
-
-
dynamic resistance
Non-repetitive current pulse 8/20
μs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to pin 2.
Non-repetitive current pulse; Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse;
ANSI/ESD STM5.1-2008.
PESD9XXL_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 16 December 2010
4 of 14
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