TS482
100mW Stereo Headphone Amplifier
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Operating from
Vcc=2V to 5.5V
100mW into 16Ω at 5V
38mW into 16Ω at 3.3V
11.5mW into 16Ω at 2V
Switch ON/OFF click reduction circuitry
High power supply rejection ratio: 85dB at 5V
High signal-to-noise ratio: 110dB(A) at 5V
High crosstalk immunity: 100dB (F=1kHz)
Rail-to-rail input and output
Unity-gain stable
Available in
SO-8, MiniSO-8 & DFN8
TS482ID, TS482IDT - SO-8
O
UT (1)
V
IN- (1)
V
IN+ (1)
G
ND
1
2
3
4
8
7
6
5
V
CC
O
UT (2)
V
IN- (2)
V
IN+ (2)
TS482IST - MiniSO-8
O
UT (1)
V
IN- (1)
V
IN+ (1)
G
ND
1
2
3
4
8
7
6
5
V
CC
O
UT (2)
V
IN- (2)
V
IN+ (2)
TS482IQT - DFN8
Description
OUT
(1)
1
2
3
4
8
7
6
5
Vcc
OUT
(2)
V
IN - (2)
V
IN + (2)
The TS482 is a dual audio power amplifier able to
drive a 16 or 32Ω stereo headset down to low
voltages.
It is delivering up to 100mW per channel (into 16Ω
loads) of continuous average power with 0.1%
THD+N from a 5V power supply.
The unity gain stable TS482 can be configured by
external gain-setting resistors.
V
IN - (1)
V
IN + (1)
GND
Typical application schematic
Rfeed1
3.9k
RpolVcc
+
Cs
100k
8
3.9k
2
-
1
Rin1
3
+
Cb
TS482
+
5
+
7
Rin2 1µF
6
-
3.9k
4
100k
Rpol
3.9k
Rfeed2
1µF
Vcc
+
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Stereo headphone amplifier
Optical storage
Computer motherboard
PDA, organizers & notebook computers
High-end TV, set-top box, DVD players
Sound cards
Left In
2.2µF
2.2µF
+
Cin2
Order Codes
Part Number
TS482ID/IDT
TS482IST
TS482IQT
-40, +85°C
Temperature Range
Package
SO-8
miniSO-8
DFN8
Packing
Tube or Tape & Reel
Tape & Reel
482I
Marking
November 2005
+
+
+
Applications
Right In Cin1
220µF
Cout1
Cout2
+
RL=32Ohms
+
RL=32Ohms
220µF
Rev 2
1/26
www.st.com
26
Absolute Maximum Ratings
TS482
1
Absolute Maximum Ratings
Table 1.
Symbol
V
CC
V
i
T
oper
T
stg
T
j
Supply voltage
(1)
Input Voltage
Operating Free Air Temperature Range
Storage Temperature
Maximum Junction Temperature
Thermal Resistance Junction to Ambient
R
thja
SO8
MiniSO8
DFN8
Power Dissipation
(2)
Pd
SO-8
MiniSO-8
DFN8
Human Body Model (pin to pin)
Machine Model - 220pF - 240pF (pin to pin)
Latch-up Immunity (all pins)
Lead Temperature (soldering, 10sec)
Lead Temperature (soldering, 10sec) for lead-free
Output Short-Circuit Duration
1. All voltages values are measured with respect to the ground pin.
2. Pd has been calculated with Tamb = 25°C, Tjunction = 150°C.
3. Attention must be paid to continuous power dissipation. Exposure of the IC to a short circuit on one or two
amplifiers simultaneously can cause excessive heating and the destruction of the device.
Key parameters and their absolute maximum ratings
Parameter
Value
6
-0.3 to V
CC
+0.3
-40 to + 85
-65 to +150
150
Unit
V
V
°C
°C
°C
175
215
70
°C/W
0.71
0.58
1.79
2
200
200
250
260
see note
(3)
W
ESD
ESD
Latch-up
kV
V
mA
°C
°C
Table 2.
Symbol
V
CC
R
L
C
L
Operating conditions
Parameter
Supply Voltage
Load Resistor
Load Capacitor
R
L
= 16 to 100Ω
R
L
> 100Ω
Common Mode Input Voltage Range
Thermal Resistance Junction to Ambient
400
100
G
ND
to V
CC
pF
Value
2 to 5.5
>= 16
Unit
V
Ω
Vicm
V
R
thja
SO-8
MiniSO-8
DFN8
(1)
150
190
41
°C/W
1. When mounted on a 4-layer PCB.
2/26
TS482
Electrical Characteristics
2
Electrical Characteristics
Table 3.
Symbol
I
CC
V
IO
I
IB
Supply Current
No input signal, no load
Input Offset Voltage (V
ICM
= V
CC
/2)
Input Bias Current (V
ICM
= V
CC
/2)
Output Power
P
O
THD+N =
THD+N =
THD+N =
THD+N =
0.1% Max, F = 1kHz, R
L
= 32Ω
1% Max, F = 1kHz, R
L
= 32Ω
0.1% Max, F = 1kHz, R
L
= 16Ω
1% Max, F = 1kHz, R
L
= 16Ω
60
95
65
67.5
100
107
mW
Electrical characteristics when V
CC
= +5V, GND = 0V, T
amb
= 25°C (unless
otherwise specified)
Parameter
Min.
Typ.
5.5
1
200
Max.
7.2
5
500
Unit
mA
mV
nA
Total Harmonic Distortion + Noise (A
v
=-1)
(1)
THD + N
R
L
= 32Ω, P
out
= 60mW, 20Hz
≤
F
≤
20kHz
R
L
= 16Ω, P
out
= 90mW, 20Hz
≤
F
≤
20kHz
Power Supply Rejection Ratio (A
v
=1), inputs floating
F = 100Hz, Vripple = 100mVpp
Max Output Current
THD +N < 1%, R
L
= 16Ω connected between out and V
CC
/2
Output Swing
V
OL
: R
L
= 32Ω
V
OH
: R
L
= 32Ω
V
OL
: R
L
= 16Ω
V
OH
: R
L
= 16Ω
Signal-to-Noise Ratio (Filter Type A, A
v
=-1)
R
L
= 32Ω, THD +N < 0.2%, 20Hz
≤
F
≤
20kHz
95
110
106
120
85
0.03
0.03
%
PSRR
dB
I
O
mA
V
O
4.45
4.2
0.4
4.6
0.55
4.4
0.48
V
0.65
SNR
dB
Channel Separation, R
L
= 32Ω
F = 1kHz
F = 20Hz to 20kHz
Crosstalk
Channel Separation, R
L
= 16Ω
F = 1kHz
F = 20Hz to 20kHz
C
I
GBP
SR
Input Capacitance
Gain Bandwidth Product (R
L
= 32Ω)
Slew Rate, Unity Gain Inverting (R
L
= 16Ω)
1.35
0.45
100
80
100
80
1
2.2
0.7
dB
pF
MHz
V/µs
1. Fig. 68 to 79 show dispersion of these parameters.
3/26
Electrical Characteristics
Table 4.
Symbol
I
CC
V
IO
I
IB
Supply Current
No input signal, no load
Input Offset Voltage (V
ICM
= V
CC
/2)
Input Bias Current (V
ICM
= V
CC
/2)
Output Power
P
O
THD+N =
THD+N =
THD+N =
THD+N =
0.1% Max, F = 1kHz, R
L
= 32Ω
1% Max, F = 1kHz, R
L
= 32Ω
0.1% Max, F = 1kHz, R
L
= 16Ω
1% Max, F = 1kHz, R
L
= 16Ω
23
36
27
28
38
42
TS482
Electrical characteristics when V
CC
= +3.3V, GND = 0V, T
amb
= 25°C (unless
otherwise specified)
(1)
Parameter
Min.
Typ.
5.3
1
200
Max.
7.2
5
500
Unit
mA
mV
nA
mW
Total Harmonic Distortion + Noise (A
v
=-1)
(1)
THD + N
R
L
= 32Ω, P
out
= 16mW, 20Hz
≤
F
≤
20kHz
R
L
= 16Ω, P
out
= 35mW, 20Hz
≤
F
≤
20kHz
Power Supply Rejection Ratio (A
v
=1), inputs floating
F = 100Hz, Vripple = 100mVpp
Max Output Current
THD +N < 1%, R
L
= 16Ω connected between out and V
CC
/2
Output Swing
V
OL
: R
L
= 32Ω
V
OH
: R
L
= 32Ω
V
OL
: R
L
= 16Ω
V
OH
: R
L
= 16Ω
Signal-to-Noise Ratio (Filter Type A, A
v
=-1)
R
L
= 32Ω, THD +N < 0.2%, 20Hz
≤
F
≤
20kHz
92
107
64
75
80
0.03
0.03
%
PSRR
dB
I
O
mA
V
O
2.85
2.68
0.3
3
0.45
2.85
0.38
V
0.52
SNR
dB
Channel Separation, R
L
= 32Ω
F = 1kHz
F = 20Hz to 20kHz
Crosstalk
Channel Separation, R
L
= 16Ω
F = 1kHz
F = 20Hz to 20kHz
C
I
GBP
SR
Input Capacitance
Gain Bandwidth Product (R
L
= 32Ω)
Slew Rate, Unity Gain Inverting (R
L
= 16Ω)
1.2
0.45
100
80
100
80
1
2
0.7
dB
pF
MHz
V/µs
1. Fig. 68 to 79 show dispersion of these parameters.
1. All electrical values are guaranteed with correlation measurements at 2V and 5V.
4/26
Electrical Characteristics
Table 5.
Symbol
I
CC
V
IO
I
IB
Supply Current
No input signal, no load
Input Offset Voltage (V
ICM
= V
CC
/2)
Input Bias Current (V
ICM
= V
CC
/2)
Output Power
P
O
THD+N
THD+N
THD+N
THD+N
= 0.1% Max, F = 1kHz, R
L
= 32Ω
= 1% Max, F = 1kHz, R
L
= 32Ω
= 0.1% Max, F = 1kHz, R
L
= 16Ω
= 1% Max, F = 1kHz, R
L
= 16Ω
12.5
17.5
13.5
14.5
20.5
22
TS482
Electrical characteristics when V
CC
= +2.5V, GND = 0V, T
amb
= 25°C (unless
otherwise specified)
(2)
Parameter
Min.
Typ.
5.1
1
200
Max.
7.2
5
500
Unit
mA
mV
nA
mW
Total Harmonic Distortion + Noise (A
v
=-1)
(1)
THD + N
R
L
= 32Ω, P
out
= 10mW, 20Hz
≤
F
≤
20kHz
R
L
= 16Ω, P
out
= 16mW, 20Hz
≤
F
≤
20kHz
Power Supply Rejection Ratio (A
v
=1), inputs floating
F = 100Hz, Vripple = 100mVpp
Max Output Current
THD +N < 1%, R
L
= 16Ω connected between out and V
CC
/2
Output Swing
V
OL
: R
L
= 32Ω
V
OH
: R
L
= 32Ω
V
OL
: R
L
= 16Ω
V
OH
: R
L
= 16Ω
Signal-to-Noise Ratio (Filter Type A, A
v
=-1)
R
L
= 32Ω, THD +N < 0.2%, 20Hz
≤
F
≤
20kHz
89
102
45
56
75
0.03
0.03
%
PSRR
dB
I
O
mA
V
O
2.14
1.97
0.25
2.25
0.35
2.15
0.325
V
0.45
SNR
dB
Channel Separation, R
L
= 32Ω
F = 1kHz
F = 20Hz to 20kHz
Crosstalk
Channel Separation, R
L
= 16Ω
F = 1kHz
F = 20Hz to 20kHz
C
I
GBP
SR
Input Capacitance
Gain Bandwidth Product (R
L
= 32Ω)
Slew Rate, Unity Gain Inverting (R
L
= 16Ω)
1.2
0.45
100
80
100
80
1
2
0.7
dB
pF
MHz
V/µs
1. Fig. 68 to 79 show dispersion of these parameters.
2. All electrical values are guaranteed with correlation measurements at 2V and 5V.
5/26
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