BC857AWR datasheet, PDF - EEWORLD Datasheet

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BC857AWR: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SUPERMINI-6; CategoryDiscrete semiconductor The transistor; File Size402KB，2 Pages; ManufacturerCentral Semiconductor

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BC857AWR Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SUPERMINI-6

BC857AWR Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	6
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	125
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.275 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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BC856W SERIES

BC857W SERIES

SURFACE MOUNT

PNP SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BC856W and

BC857W Series types are PNP Silicon Transistors

manufactured by the epitaxial planar process, epoxy

molded in a SUPERmini

surface mount package,

designed for general purpose switching and amplifier

applications.

MARKING CODE: SEE MARKING CODE TABLE

ON FOLLOWING PAGE

SOT-323 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Peak Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

VBE(ON)

Cib

Cob

Note: Reverse Lead Codes Available, Add “R” to

the end of the Part # and Marking Code.

SYMBOL

VCBO

VCEO

VEBO

ICM

IBM

TJ, Tstg

BC857W

BC856W

UNITS

°C

°C/W

UNITS

μA

MHz

BC857CW

MIN

MAX

420

800

5.0

100

200

275

-65 to +150

455

MAX

4.0

100

CHARACTERISTICS:

(TA=25°C unless

TEST CONDITIONS

VCB=30V

VCB=30V, TA=150°C

VEB=5.0V

IC=10μA (BC857W)

IC=10μA (BC856W)

IC=10mA (BC857W)

IC=10mA (BC856W)

IE=10μA

IC=10mA, IB=0.5mA

IC=100mA, IB=5.0mA

IC=100mA, IB=5mA

IC=2.0mA, VCE=5.0V

IC=10mA, VCE=5.0V

VEB=0.5V, IC=0, f=1.0MHz

VCB=10V, IE=0, f=1.0MHz

VCE=5.0V, IC=10mA, f=100MHz

VCE=5.0V, IC=200μA,

RS=2.0KΩ, f=1.0KHz, BW=200Hz

otherwise noted)

MIN

5.0

0.30

0.65

0.95

0.75

0.82

5.0

0.60

100

BC856BW

BC857BW

MIN

MAX

220

475

hFE

VCE=5.0V, IC=2.0mA

BC856AW

BC857AW

MIN

MAX

125

250

R1 (20-November 2009)

BC857AWR Related Products

	BC857AWR	BC856BWR	BC856AWR	BC857BWR	BC857CWR
Description	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SUPERMINI-6	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SUPERMINI-6	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SUPERMINI-6	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SUPERMINI-6	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SUPERMINI-6
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	6	6	6	6	6
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	45 V	65 V	65 V	45 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	125	220	125	220	420
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.275 W	0.275 W	0.275 W	0.275 W	0.275 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
Base Number Matches	1	1	1	1	-

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