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BC239J05Z

Description
Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size56KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

BC239J05Z Overview

Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN

BC239J05Z Parametric

Parameter NameAttribute value
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
BC237/238/239
BC237/238/239
Switching and Amplifier Applications
• Low Noise: BC239
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CES
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
: BC237
: BC238/239
: BC237
: BC238/239
: BC237
: BC238/239
1
TO-92
1. Collector 2. Base 3. Emitter
Value
50
30
45
25
6
5
100
500
150
-55 ~ 150
Units
V
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: BC237
: BC238/239
Emitter Base Breakdown Voltage
: BC237
: BC238/239
Collector Cut-off Current
: BC237
: BC238/239
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Base Capacitance
Noise Figure
: BC237/238
: BC239
: BC239
Test Condition
I
C
=2mA, I
B
=0
Min.
45
25
I
E
=1µA, I
C
=0
6
5
V
CE
=50V, V
BE
=0
V
CE
=30V, V
BE
=0
V
CE
=5V, I
C
=2mA
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
=2mA
V
CE
=3V, I
C
=0.5mA, f=100MHz
V
CE
=5V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
EB
=0.5V, I
C
=0, f=1MHz
V
CE
=5V, I
C
=0.2mA,
f=1KHz R
G
=2KΩ
V
CE
=5V, I
C
=0.2mA
R
G
=2KΩ, f=30~15KHz
0.55
150
120
0.07
0.2
0.73
0.87
0.62
85
250
3.5
8
2
10
4
4
6
0.2
0.2
15
15
800
0.2
0.6
0.83
1.05
0.7
V
V
V
V
V
MHz
MHz
pF
pF
dB
dB
dB
V
V
nA
nA
Typ.
Max.
Units
V
V
BV
EBO
I
CES
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
C
ib
NF
h
FE
Classification
Classification
h
FE
©2000 Fairchild Semiconductor International
A
120 ~ 220
B
180 ~ 460
C
380 ~ 800
Rev. B, January 2001
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