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GS81302D09GE-200

Description
DDR SRAM, 16MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
Categorystorage    storage   
File Size629KB,39 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance  
Download Datasheet Parametric View All

GS81302D09GE-200 Overview

DDR SRAM, 16MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

GS81302D09GE-200 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeBGA
package instruction15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
JESD-609 codee1
length17 mm
memory density150994944 bit
Memory IC TypeDDR SRAM
memory width9
Humidity sensitivity level3
Number of functions1
Number of terminals165
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX9
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.5 mm
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width15 mm
Base Number Matches1
Preliminary
GS81302D08/09/18/36E-333/300/250/200/167
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 4 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• Pin-compatible with present 144 Mb devices
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
144Mb SigmaQuad
TM
-II
Burst of 4 SRAM
333 MHz–167 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
Bottom View
165-Bump, 15 mm x 17 mm BGA
1 mm Bump Pitch, 11 x 15 Bump Array
C clock inputs. C and C are also independent single-ended
clock inputs, not differential inputs. If the C clocks are tied
high, the K clocks are routed internally to fire the output
registers instead.
Because Separate I/O SigmaQuad-II B4 RAMs always transfer
data in four packets, A0 and A1 are internally set to 0 for the
first read or write transfer, and automatically incremented by 1
for the next transfers. Because the LSBs are tied off internally,
the address field of a SigmaQuad-II B4 RAM is always two
address pins less than the advertised index depth (e.g., the 8M
x 18 has a 2M addressable index).
SigmaQuad™ Family Overview
The GS81302D08/09/18/36E are built in compliance with the
SigmaQuad-II SRAM pinout standard for Separate I/O
synchronous SRAMs. They are 150,994,944-bit (144Mb)
SRAMs. The GS81302D08/09/18/36E SigmaQuad SRAMs
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Clocking and Addressing Schemes
The GS81302D08/09/18/36E SigmaQuad-II SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer. The device also allows the user to manipulate the
output register clock inputs quasi independently with the C and
Parameter Synopsis
- 333
tKHKH
tKHQV
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
-250
4.0 ns
0.45 ns
-200
5.0 ns
0.45 ns
-167
6.0 ns
0.50 ns
Rev: 1.02a 6/2010
1/39
© 2007, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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