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SIHFU9012

Description
TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size1MB,9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SIHFU9012 Overview

TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3, FET General Purpose Power

SIHFU9012 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTO-251
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)240 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (Abs) (ID)4.5 A
Maximum drain current (ID)4.5 A
Maximum drain-source on-resistance0.7 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)25 W
Maximum pulsed drain current (IDM)18 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IRFR9012, IRFU9012, SiHFR9012, SiHFU9012
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= - 10 V
9.1
3.0
5.9
Single
S
FEATURES
- 50
0.70
Surface Mountable (Order as IRFR9012, SiHFR9012)
Straight Lead Option (Order as IRFU9012, SiHFU9012)
Available
Repetitive Avalanche Ratings
RoHS*
COMPLIANT
Dynamic dV/dt Rating
Simple Drive Requirements
Ease of Paralleling
DESCRIPTION
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance combined
with high transconductance; superior reverse energy and
diode recovery dV/dt capability.
The Power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The DPAK
(TO-252) surface mount package brings the advantages of
Power MOSFET’s to high volume applications where PC
Board surface mounting is desirable. The surface mount
option IRFR9012, SiHFR9012 is provided on 16 mm tape.
The straight lead option IRFU9012, SiHFU9012 of the device
is called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
DPAK
(TO-252)
D
D
IPAK
(TO-251)
G
G
S
G
D S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
DPAK (TO-252)
IRFR9012PbF
SiHFR9012-E3
IRFR9012
SiHFR9012
DPAK (TO-252)
IRFR9012TRPbF
a
SiHFR9012T-E3
a
IRFR9012TR
a
SiHFR9012T
a
DPAK (TO-252)
IRFR9012TRLPbF
a
SiHFR9012TL-E3
a
IRFR9012TRL
a
SiHFR9012TL
a
IPAK (TO-251)
IRFU9012PbF
SiHFU9012-E3
IRFU9012
SiHFU9012
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
- 50
± 20
- 4.5
- 2.8
- 18
0.20
240
- 5.3
2.5
25
5.8
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
I
DM
Pulsed Drain
Linear Derating Factor
E
AS
Single Pulse Avalanche Energy
b
a
I
AR
Repetitive Avalanche Current
a
E
AR
Repetitive Avalanche Energy
P
D
Maximum Power Dissipation
T
C
= 25 °C
c
dV/dt
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
T
J
, T
stg
for 10 s
Soldering Recommendations (Peak Temperature)
d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 9.7 mH, R
G
= 25
Ω,
peak I
L
= - 5.3 A.
c. I
SD
- 5.3 A, dI/dt
- 80 A/µs, V
DD
40 V, T
J
150 °C, suggested R
G
= 24
Ω.
d. 0.063" (1.6 mm) from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91377
S09-0373-Rev. A, 09-Mar-09
www.vishay.com
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