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SIHF830ASTRL-GE3

Description
TRANSISTOR 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size208KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
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SIHF830ASTRL-GE3 Overview

TRANSISTOR 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power

SIHF830ASTRL-GE3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)230 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)5 A
Maximum drain current (ID)5 A
Maximum drain-source on-resistance1.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)74 W
Maximum pulsed drain current (IDM)20 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Max.) ()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
24
6.3
11
Single
D
FEATURES
500
1.40
I
2
PAK
(TO-262)
D
2
PAK
(TO-263)
Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C
oss
specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
G
G
S
D
G
D
S
S
N-Channel MOSFET
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High speed power switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half Bridge and Full Bridge
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHF830AS-GE3
IRF830ASPbF
SiHF830AS-E3
D
2
PAK (TO-263)
SiHF830ASTRL-GE3
a
IRF830ASTRLPbF
a
SiHF830ASTL-E3
a
I
2
PAK (TO-262)
SiHF830AL-GE3
a
IRF830ALPbF
SiHF830AL-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b, e
Avalanche Current
a
Repetiitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T
A
= 25 °C
T
C
= 25 °C
Current
a, e
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
for 10 s
LIMIT
500
± 30
5.0
3.2
20
0.59
230
5.0
7.4
3.1
74
5.3
- 55 to + 150
300
d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 18 mH, R
g
= 25
,
I
AS
= 5.0 A (see fig. 12).
c. I
SD
5.0 A, dI/dt
370 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. Uses SiHF830A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91062
S11-1049-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

SIHF830ASTRL-GE3 Related Products

SIHF830ASTRL-GE3 SIHF830AL-GE3 SIHF830AS-GE3
Description TRANSISTOR 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power TRANSISTOR 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power TRANSISTOR 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Parts packaging code D2PAK TO-262AA D2PAK
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 4 3 4
Reach Compliance Code unknown unknown unknown
Avalanche Energy Efficiency Rating (Eas) 230 mJ 230 mJ 230 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 500 V 500 V
Maximum drain current (Abs) (ID) 5 A 5 A 5 A
Maximum drain current (ID) 5 A 5 A 5 A
Maximum drain-source on-resistance 1.4 Ω 1.4 Ω 1.4 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-262AA TO-263AB
JESD-30 code R-PSSO-G2 R-PSIP-T3 R-PSSO-G2
Number of components 1 1 1
Number of terminals 2 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 74 W 74 W 74 W
Maximum pulsed drain current (IDM) 20 A 20 A 20 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES NO YES
Terminal form GULL WING THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 40 40
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
Shell connection DRAIN - DRAIN
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