M74HC592
8 BIT REGISTER BINARY COUNTER
s
s
s
s
s
s
s
HIGH SPEED:
f
MAX
= 53 MHz (TYP.) at V
CC
= 6V
LOW POWER DISSIPATION:
I
CC
= 4µA(MAX.) at T
A
=25°C
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 4mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 592
DIP
SOP
TSSOP
ORDER CODES
PACKAGE
DIP
SOP
TSSOP
TUBE
M74HC592B1R
M74HC592M1R
T&R
M74HC592RM13TR
M74HC592TTR
DESCRIPTION
The M74HC592 is an high speed CMOS 8-BIT
REGISTER COUNTER fabricated with silicon
gate C
2
MOS technology.
The M74HC592 is a parallel input, 8 bit storage
register feeding an 8 bit binary counter. Both the
register and the counter have individual positive
edge triggered clock. In addition, the counter has
direct load and clear functions. Expansion is easily
accomplished by connecting RCO at the first
stage to the count enable of the second stage.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
August 2001
1/14
M74HC592
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
1 to 7, 15
9
10
11
12
13
14
8
16
SYMBOL
A to H
RCO
CCLR
CCK
CCKEN
RCK
CLOAD
GND
V
CC
NAME AND FUNCTION
Data Inputs
Ripple Carry Output
Counter Clear Input
Counter Clock Input
Counter Clock Enable
Input
Register Clock Input
Counter Load Input
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
INPUTS
OUTPUT
RCK
x
x
CLOAD
L
H
H
H
X
X
X
H
H
H
CCLR
H
L
H
H
H
H
H
CCKEN
X
X
X
X
L
L
H
X
CCK
X
X
X
X
REGISTER DATA IS LOADED INTO COUNTER
COUNTER CLEAR
THE DATA OF A THRU H INPUTS IS STORED INTO REGISTER
REGISTER STATE IS NOT CHANGED
COUNTER ADVANCES THE COUNT
NO COUNT
NO COUNT
X: Don’t Care
RCO = QA’·QB’·QC’·QD’·QE’·QF’·QG’·QH’ (QA’ to QH’ : INTERNAL OUTPUTS OF THE COUNTER)
2/14
M74HC592
TIMING CHART
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
P
D
T
stg
T
L
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Power Dissipation
Storage Temperature
Lead Temperature (10 sec)
Parameter
Value
-0.5 to +7
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±
20
±
20
±
25
±
50
500(*)
-65 to +150
300
Unit
V
V
V
mA
mA
mA
mA
mW
°C
°C
I
CC
or I
GND
DC V
CC
or Ground Current
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
°
C; derate to 300mW by 10mW/
°
C from 65
°
C to 85
°
C
4/14
Embedded System
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