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CTB12-600CPT

Description
TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB, TO-220AB, 3 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size206KB,2 Pages
ManufacturerCynergy 3
Environmental Compliance
Download Datasheet Parametric View All

CTB12-600CPT Overview

TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB, TO-220AB, 3 PIN

CTB12-600CPT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Shell connectionMAIN TERMINAL 2
ConfigurationSINGLE
Critical rise rate of commutation voltage - minimum value5 V/us
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current25 mA
Maximum DC gate trigger voltage1.3 V
Maximum holding current25 mA
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum leakage current0.005 mA
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current12 A
Off-state repetitive peak voltage600 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeTRIAC
Base Number Matches1
CTA/CTB 12
12Amp - 400/600/800/1000V - TRIAC
Applications
• Phase Control
• Static Switching
• Light Dimming
• Motor Speed Control
• Kitchen Equipment
• Power Tools
• Solenoid Valve Controls:
- Dishwashers
- Washing Machines
#
Suitable for General Purpose AC Switching
#
Altgernistor/No Snubber Versions for
Inductive Loads
#
Logic Level Available for Use with
Microcontrollers and Low Level Devices
#
IGT Range 5-50 mA (Q1)
#
V
DRM
/V
RMM
400, 600, 800, 1000V
Absolute Maximum Ratings
RMS On-State Current (full sine wave)
Non Repetitive Surge Peak On-State Current
(Full Cycle, Tj Initial = 25˚C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
=2 x I
GT
, tr<100ns, Tj = 125˚C
Tc = 105˚C
Tc = 90˚C
CONDITIONS
TO-220AB
TO-220AB Iso
F =50 Hz
F =60 Hz
tp = 10 ms
F =120 Hz
tp = 20 µs
SYMBOL
I
T(RMS)
I
TSM
I
2
t
di/dt
I
GM
P
G(AV)
Tstg
Tj
V
ISO
RATING
12A
120A
126A
78A
2
s
100A/µs
4A
1W
-40 to +150˚C
-40 to +125˚C
2500 V
RMS
A1
A2
Peak Gate Current @ Tj = 125˚C
G
Average Gate Power Dissipation @ Tj = 125˚C
Storage Temperature Range
Operating Junction Temperature Range
Isolation Voltage (CTA Series only)
A2
TO-220AB Isolated
(CTA12)
Electrical Characteristics
ALTERNISTOR/NO SNUBBER AND LOGIC LEVEL (3 Quadrants)
A1
A2
TW
5mA
1.3V
0.2V
10mA
SW
10mA
1.3V
0.2V
15mA
25mA
30mA
40V/µs
5.4A/ms
2.9A/ms
CW
35mA
1.3V
0.2V
35mA
50mA
60mA
400V/µs
BW
50mA
1.3V
0.2V
50mA
70mA
80mA
1000V/µs
I
GT
MAX @ V
D
=12 V, R
L
= 30Ω
G
NOTE 1
QI-II-III
QI-II-III
Tj =
125˚C
QI-II-III
V
GT
MAX @ V
D
=12 V, R
L
= 30Ω
V
GD
MIN @ V
D
=V
DRM
, R
L
= 3.3kΩ
I
H
MAX @ I
T
= 500 mA
I
L
MAX @ I
G
= 1.2 I
GT
A2
TO-220AB Non-Isolated
(CTB12)
NOTE 2
QI-III
Q-II
NOTE 2
NOTE 2
10mA
15mA
20V/µs
3.5A/ms
1A/ms
I
L
MAX @ I
G
= 1.2 I
GT
dv/dt MIN @ VD = 67%V
DRM
(gate open)
NOTE 2
Tj = 125˚C
(di/dt)c MIN @ (dv/dt)c = 0.1 V/ms
Tj = 125˚C
Tj = 125˚C
Tj = 125˚C
(di/dt)c MIN @ (dv/dt)c = 10 V/ms
G
A1
(di/dt)c MIN without Snubber
STANDARD (4 Quadrants)
I
GT
MAX @ V
D
=12 V, R
L
= 30Ω
I
GT
MAX @ V
D
=12 V, R
L
= 30Ω
NOTE 2 & 4
6.5A/ms
C
B
50mA
100mA
1.3V
0.2V
25mA
QI-III-IV
Q-II
40mA
80mA
200V/µs
5V/µs
50mA
50mA
100mA
400V/µs
10V/µs
12A/ms
NOTE 1
NOTE 1
QI-II-III
QIV
Q-All
Tj = 125˚C
Q-All
25mA
50mA
V
GT
MAX @ V
D
=12 V, R
L
= 30Ω
V
GD
MIN @ V
D
=V
DRM
, R
L
= 3.3kΩ
I
H
MAX @ I
T
= 500 mA
I
L
MAX @ I
G
= 1.2 I
GT
I
L
MAX @ I
G
= 1.2 I
GT
dv/dt MIN @ VD = 67%V
DRM
(gate open)
NOTE 2
Tj = 125˚C
(dv/dt)c MIN @ (di/dt)c = 2.7 A/ms
GENERAL NOTES
ISO
9001
C E R T I F I E D
1.
2.
3.
4.
NOTE 2
NOTE 2
Tj = 125˚C
Minimum IGT is guaranted at 5% of IGT max.
Competitive part number cross-reference available at:
For both polarities of A2 referenced to A1
All parameters at 25 degrees C unless otherwise specified.
Commutating dv/dt=50V.µsec (exponential to 200Vpk)
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