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FDB047N10

Description
120 A, 100 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
CategoryDiscrete semiconductor    The transistor   
File Size507KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FDB047N10 Overview

120 A, 100 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

FDB047N10 Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeD2PAK
package instructionROHS COMPLIANT, D2PAK-3
Contacts3
Manufacturer packaging code3LD, TO-263, SURFACE MOUNT (D2PAK)
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)1153 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)164 A
Maximum drain current (ID)120 A
Maximum drain-source on-resistance0.0047 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)375 W
Maximum pulsed drain current (IDM)656 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
FDB047N10 N-Channel PowerTrench
®
MOSFET
August 2008
FDB047N10
N-Channel
Description
• R
DS(on)
= 3.9mΩ ( Typ.) @ V
GS
= 10V, I
D
= 75A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
DS(on)
• High power and current handing capability
• RoHS compliant
PowerTrench
®
tm
MOSFET
General Description
This N-Channel MOSFET is producedusing Fairchild Semicon-
ductor’s advance PowerTrench process that has been especially
tailored to minimize the on-state resistance and yet maintain
superior switching performance.
100V, 164A, 4.7mΩ
Application
• DC to DC converters / Synchronous Rectification
D
D
G
G
S
D
2
-PAK
FDB Series
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
- Derate above 25
o
C
o
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-
-
-
Continuous (T
C
= 25
o
C, Silicon Limited)
Continuous (T
C
= 100
o
C, Silicon Limited)
Continuous (T
C
= 25
o
C, Package Limited)
- Pulsed
(Note 1)
(Note 2)
(Note 3)
Ratings
100
±20
164*
116*
120
656*
1153
4.5
375
2.5
-55 to +175
300
Units
V
V
A
A
A
A
mJ
V/ns
W
W/
o
C
o
C
o
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
*
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.4
62.5
Units
o
C/W
©2008 Fairchild Semiconductor Corporation
FDB047N10 Rev. A1
1
www.fairchildsemi.com
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