FFPF15S60S
October 2007
STEALTH
TM
II Rectifier
FFPF15S60S
Features
• High Speed Switching, t
rr
< 35ns @ I
F
= 15A
• High Reverse Voltage and High Reliability
• RoHS compliant
tm
15A, 600V STEALTH
TM
II Rectifier
The FFPF15S60S is STEALTH
TM
II rectifier with soft recovery
characteristics. It is silicon nitride passivated ion-implanted epi-
taxial planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
TO-220F-2L
1. Cathode 2. Anode
1. Cathode
2. Anode
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J
, T
STG
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating and Storage Temperature Range
@ T
C
= 52 C
o
Parameter
Ratings
600
600
600
15
150
-65 to +150
Units
V
V
V
A
A
o
C
Thermal Characteristics
Symbol
R
θJC
Parameter
Maximum Thermal Resistance, Junction to Case
Ratings
4.6
Units
o
C/W
Package Marking and Ordering Information
Device Marking
F15S60S
Device
FFPF15S60STU
Package
TO-220F-2L
Reel Size
-
Tape Width
-
Quantity
50
©2007 Fairchild Semiconductor Corporation
FFPF15S60S Rev. A
1
www.fairchildsemi.com
FFPF15S60S
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted
Symbol
V
FM
1
I
RM
1
t
rr
t
rr
I
rr
S factor
Q
rr
t
rr
I
rr
S factor
Q
rr
W
AVL
I
F
= 15A
I
F
= 15A
V
R
= 600V
V
R
= 600V
I
F
= 1A, di/dt = 100A/µs, V
R
= 30V
I
F
= 15A, di/dt = 200A/µs, V
R
= 390V
Parameter
T
C
= 25 C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 25
o
C
o
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
20
Typ.
2.1
1.6
-
-
21
23
2.5
0.7
29
55
4.3
1.1
118
-
Max.
2.6
-
100
500
30
35
-
-
-
-
-
-
-
-
Units
V
µA
ns
ns
A
nC
ns
A
nC
mJ
I
F
= 15A, di/dt = 200A/µs, V
R
= 390V
Avalanche Energy ( L = 40mH)
T
C
= 125
o
C
Notes:
1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
Test Circuit and Waveforms
FFPF15S60S Rev. A
2
www.fairchildsemi.com
FFPF15S60S
Typical Performance Characteristics
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
70
o
Figure 2. Typical Reverse Current
vs. Reverse Voltage
100
Reverse Current, I
R
[
µ
A
]
T
C
= 125 C
Forward Current, I
F
[A]
10
10
T
C
= 125 C
o
T
C
= 75 C
T
C
= 25 C
o
o
1
T
C
=75 C
o
1
0.1
T
C
= 25 C
o
0.1
0
1
2
3
Forward Voltage, V
F
[V]
4
0.01
10
100
200
300
400
Reverse Voltage, V
R
[V]
500
600
Figure 3. Typical Junction Capacitance
180
Typical Capacitance
at 0V = 180 pF
Figure 4. Typical Reverse Recovery Time
vs. di/dt
60
Reverse Recovery Time, t
rr
[ns]
T
C
= 125 C
o
I
F
= 15A
150
Capacitances, Cj [pF]
50
120
40
T
C
= 75 C
o
90
30
60
T
C
= 25 C
o
30
0.1
1
10
Reverse Voltage, V
R
[V]
100
20
100
200
300
400
di/dt
[
A/
µ
s
]
500
600
Figure 5. Typical Reverse Recovery
Current vs. di/dt
7
6
5
4
3
T
C
= 25 C
o
Figure 6. Forward Current Derating Curve
20
T
C
= 125 C
o
Average Forward Current, I
F(AV)
[A]
Reverse Recovery Current, I
rr
[A]
16
12
DC
T
C
= 75 C
o
8
2
I
F
= 15A
4
1
100
200
300
400
500
600
0
25
50
di/dt
[
A/
µ
s
]
75
100
125
o
Case temperature, T
C
[
C
]
150
FFPF15S60S Rev. A
3
www.fairchildsemi.com
FFPF15S60S
Mechanical Dimensions
TO-220F 2L
10.16
±0.20
ø3.18
±0.10
2.54
±0.20
(0.70)
3.30
±0.10
6.68
±0.20
15.80
±0.20
(1.00x45°)
(6.50)
(1.80)
9.75
±0.30
12.00
±0.20
MAX1.47
0.80
±0.10
2.76
±0.20
0.35
±0.10
2.54TYP
[2.54
±0.20
]
2.54TYP
[2.54
±0.20
]
+0.10
0.50
–0.05
9.40
±0.20
4.70
±0.20
Dimensions in Millimeters
15.87
±0.20
FFPF15S60S Rev. A
4
www.fairchildsemi.com
FFPF15S60S
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury to the user.
2.
A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
tm
Rev. I31
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild Semiconductor. The datasheet is printed for reference infor-
mation only.
No Identification Needed
Full Production
Obsolete
Not In Production
FFPF15S60S Rev. A
5
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