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FDMA1032CZ

Description
3700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229
CategoryDiscrete semiconductor    The transistor   
File Size375KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FDMA1032CZ Overview

3700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229

FDMA1032CZ Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeMLP
package instructionSMALL OUTLINE, S-PDSO-N6
Contacts6
Manufacturer packaging code6LD,MLP,DUAL,NON-JEDEC,2MM SQUARE,DUAL DAP
Reach Compliance Codecompli
ECCN codeEAR99
Samacsys Confidence4
Samacsys StatusReleased
Samacsys PartID1010251
Samacsys Pin Cou8
Samacsys Part CategoryTransis
Samacsys Package CategoryOthe
Samacsys Footprint NameMicroFET 2x2
Samacsys Released Date2018-12-30 16:13:53
Is SamacsysN
Other featuresESD PROTECTION
Shell connectionDRAIN
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)3.7 A
Maximum drain current (ID)3.7 A
Maximum drain-source on-resistance0.068 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-229
JESD-30 codeS-PDSO-N6
JESD-609 codee4
Humidity sensitivity level1
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)1.4 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
FDMA1032CZ 20V Complementary PowerTrench
®
MOSFET
March 2008
FDMA1032CZ
20V Complementary PowerTrench
®
MOSFET
General Description
This device is designed specifically as a single package
solution for a DC/DC 'Switching' MOSFET in cellular
handset
and
other
ultra-portable
applications.
It
features an independent N-Channel & P-Channel
MOSFET with low on-state resistance for minimum
conduction losses. The gate charge of each MOSFET
is also minimized to allow high frequency switching
directly from the controlling device. The MicroFET 2x2
package offers exceptional thermal performance for its
physical size and is well suited to switching applications.
tm
Features
Q1: N-Channel
3.7 A, 20V.
Q2: P-Channel
–3.1 A, –20V. R
DS(ON)
= 95 mΩ @ V
GS
= –4.5V
R
DS(ON)
= 141 mΩ @ V
GS
= –2.5V
Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
HBM ESD protection level > 2kV (Note 3)
RoHS Compliant
PIN 1
S1 G1
D1
D2
G1
D2
D1 G2 S2
R
DS(ON)
= 68 mΩ @ V
GS
= 4.5V
R
DS(ON)
= 86 mΩ @ V
GS
= 2.5V
D2
S1
1
2
3
6
5
4
D1
G2
S2
MicroFET 2x2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Q1
20
±12
(Note 1a)
Q2
–20
±12
–3.1
–6
1.4
0.7
–55 to +150
Units
V
V
A
W
°C
3.7
6
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJA
R
θJA
R
θJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86 (Single Operation)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
°C/W
Package Marking and Ordering Information
Device Marking
032
©2008
Fairchild Semiconductor Corporation
Device
FDMA1032CZ
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
FDMA1032CZ Rev B2 (W)

FDMA1032CZ Related Products

FDMA1032CZ FDMA1032CZ_08
Description 3700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229 3700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229
Shell connection DRAIN DRAIN
Number of components 2 2
Number of terminals 6 6
surface mount YES Yes
Terminal form NO LEAD NO
Terminal location DUAL pair
transistor applications SWITCHING switch
Transistor component materials SILICON silicon
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