KSC5502 — NPN Planar Silicon Transistor
April 2008
KSC5502
NPN Planar Silicon Transistor
High Voltage Power Switch Mode Application
• Small Variance in Storage Time
• Wide Safe Operating Area
• Suitable for Electronic Ballast Application
Equivalent Circuit
C
B
1
TO-220
E
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings *
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
EAS
T
C
=25°C unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)**
Base Current (DC)
Collector Current (Pulse)**
Collector Dissipation(T
C
=25°C)
Junction Temperature
Storage Junction Temperature Range
Avalanche Energy(T
j
=25°C)
Value
1200
600
12
2
4
1
2
50
150
- 65 ~ 150
2.5
Units
V
V
V
A
A
A
A
W
°C
°C
mJ
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** Pulse Test : Pulse Width = 5ms, Duty Cycle
≤
10%
Thermal Characteristics
T =25°C unless otherwise noted
a
Symbol
R
θJ
C
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Value
2.5
85
Units
°C/W
°C/W
Ordering Information
Part Number
KSC5502TU
Marking
J5502
Package
TO-220
Packing Method
TUBE
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. A1
1
www.fairchildsemi.com
KSC5502 — High Voltage Power Switch Mode Application
Electrical Characteristics *
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
I
C
=1mA, I
E
=0
I
C
=5mA, I
B
=0
I
E
=500µA, I
C
=0
V
CES
=1200V, V
BE
=0
T
C
=25°C
T
C
=125°C
Min.
1200
600
12
Typ.
1350
750
13.2
Max.
Units
V
V
V
100
500
100
500
10
15
8
4
3
12
6
28
27
8.7
6.6
20
16
0.09
0.13
0.08
0.12
0.19
0.35
0.77
0.65
0.83
0.70
410
20
0.8
1.1
0.6
1.0
1.5
3.0
1.0
0.9
1.2
1.0
500
100
30
40
µA
I
CEO
Collector Cut-off Current
V
CE
=600V, I
B
=0
T
C
=25°C
T
C
=125°C
µA
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
V
EB
=12V, I
C
=0
V
CE
=1V, I
C
=0.2A
T
C
=25°C
T
C
=25°C
T
C
=125°C
µA
V
CE
=1V, I
C
=1A
T
C
=25°C
T
C
=125°C
V
CE
=2.5V, I
C
=0.5A
T
C
=25°C
T
C
=125°C
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=0.2A, I
B
=0.02A
T
C
=25°C
T
C
=125°C
V
V
V
V
V
V
V
V
V
V
pF
pF
I
C
=0.4A, I
B
=0.08A
T
C
=25°C
T
C
=125°C
I
C
=1A, I
B
=0.2A
T
C
=25°C
T
C
=125°C
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
=0.4A, I
B
=0.08A
T
C
=25°C
T
C
=125°C
I
C
=1A, I
B
=0.2A
T
C
=25°C
T
C
=125°C
C
ib
C
ob
Input Capacitance
Output Capacitance
V
EB
=8V, I
C
=0, f=1MHz
V
CB
=10V, I
E
=0, f=1MHz
* Pulse Test : Pulse Width = 5ms, Duty Cycle
≤
10%
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. A1
2
www.fairchildsemi.com
KSC5502 — High Voltage Power Switch Mode Application
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CE
(DSAT)
Parameter
Dynamic Saturation Voltage
Test Condition
I
C
=0.4A, I
B1
=80mA
V
CC
=300V
I
C
=1A, I
B1
=200mA
V
CC
=300V
@ 1µs
@ 3µs
@ 1µs
@ 3µs
Min
Typ.
11
8
23
13
Max. Units
V
V
V
V
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20s)
t
ON
Turn On Time
I
C
=0.4A, I
B1
=80mA
T
C
=25°C
I
B2
=0.2A, V
CC
=300V
T
C
=125°C
R
L
= 750Ω
T
C
=25°C
T
C
=125°C
t
ON
Turn On Time
I
C
=1A, I
B1
=160mA
I
B2
=160mA,
V
CC
=300V
R
L
= 300Ω
T
C
=25°C
T
C
=125°C
T
C
=25°C
T
C
=125°C
INDUCTIVE LOAD SWITCHING (V
CC
=15V)
t
STG
Storage Time
I
C
=0.4A, I
B1
=80mA
I
B2
=0.2A, V
Z
=300V
L
C
=200uH
T
C
=25°C
T
C
=125°C
T
C
=25°C
T
C
=125°C
t
C
Cross-over Time
T
C
=25°C
T
C
=125°C
t
STG
Storage Time
I
C
=0.8A, I
B1
=160mA T
C
=25°C
I
B2
=160mA,
T
C
=125°C
V
CC
=300V
L
C
=200uH
T
C
=25°C
T
C
=125°C
t
C
Cross-over Time
T
C
=25°C
T
C
=125°C
1.4
1.7
130
80
210
130
4.9
5.3
170
340
300
810
600
250
5.5
350
200
2.0
µs
µs
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
250
260
3.3
3.8
220
250
4.3
5.0
5.0
450
4.0
350
ns
ns
µs
µs
ns
ns
µs
µs
t
OFF
Turn Off Time
t
OFF
Turn Off Time
t
F
Fall Time
t
F
Fall Time
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. A1
3
www.fairchildsemi.com
KSC5502 — High Voltage Power Switch Mode Application
Typical Characteristics
V
CE
=1V
100
I
C
[A], COLLECTOR CURRENT
3
h
FE
, DC CURRENT GAIN
1A
900mA
800mA
700mA
600mA
500mA
400mA
300mA
200mA
I
B
=100mA
T
J
=125 C
o
o
2
T
J
=25 C
10
1
0
0
1
2
3
4
5
6
7
1
1
10
100
1000
V
CE
[V], COLLECTOR EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT)
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
I
C
=5I
B
I
C
=10I
B
10
V
CE(sat)
(V), VOLTAGE
V
CE(sat)
(V), VOLTAGE
1
1
T
J
=125 C
0.1
o
T
J
=125 C
0.1
o
T
J
=25 C
o
T
J
=25 C
o
0.01
1
10
100
1000
0.01
1
10
100
1000
I
C
(mA), COLLECTOR CURRENT
I
C
(mA), COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
2
o
Figure 4. Collector-Emitter Saturation Voltage
T
J
=25 C
2.0A
I
C
=5I
B
V
CE
[V], VOLTAGE
1.5A
1.0A
1
V
BE
[V], VOLTAGE
1
T
J
=25 C
o
0.4A
I
C
=0.2A
T
J
=125 C
o
0
1
10
100
1k
0.1
1
10
100
1k
I
B
[mA], BASE CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 5. Typical Collector Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. A1
4
www.fairchildsemi.com
KSC5502 — High Voltage Power Switch Mode Application
Typical Characteristics
(Continued)
1000
900
800
I
C
=10I
B
700
600
500
I
C
=5I
B1
=2I
B2
V
CC
=300V
PW=20us
V
BE
[V], VOLTAGE
t
ON
[ns],TIME
1
400
T
J
=25 C
o
300
T
J
=125 C
o
T
J
=125 C
o
200
o
T
J
=25 C
0.1
1
10
100
1k
100
0.3
0.4
0.5
0.6 0.7 0.8 0.9 1
2
3
I
C
[mA], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 7. Base-Emitter Saturation Voltage
5
4.5
4
3.5
3
Figure 8. Resistive Switching Time, t
on
1000
900
800
I
C
=5I
B1
=2I
B2
V
CC
=300V
PW=20us
700
600
500
I
C
=5I
B1
=5I
B2
V
CC
=300V
PW=20us
t
OFF
(us),TIME
t
ON
[ns],TIME
400
2.5
T
J
=125 C
2
o
300
T
J
=125 C
o
T
J
=25 C
200
1.5
o
o
T
J
=25 C
1
0.3
0.4
0.5
0.6 0.7 0.8 0.9 1
2
3
100
0.3
0.4
0.5
0.6 0.7 0.8 0.9 1
2
3
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 9. Resistive Switching Time, t
off
Figure 10. Resistive Switching Time, t
on
6
9
8
7
6
5
I
C
=5I
B1
=5I
B2
V
CC
=300V
PW=20us
4
I
C
=5I
B1
=2I
B2
V
CC
=15V
V
Z
=300V
L
C
=200uH
T
J
=125 C
o
t
OFF
(us),TIME
t
STG
(us),TIME
3
5
T
J
=125 C
4
o
T
J
=25 C
3
o
2
T
J
=25 C
o
2
0.3
0.4
0.5
0.6 0.7 0.8 0.9 1
2
3
1
0.3
0.4
0.5
0.6 0.7 0.8 0.9 1
2
3
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 11. Resistive Switching Time, t
off
Figure 12. Inductive Switching Time, t
STG
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. A1
5
www.fairchildsemi.com
京公网安备 11010802033920号
EEWORLD
