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BD6xxx

Description
4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
Categorysemiconductor    Discrete semiconductor   
File Size362KB,12 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

BD6xxx Overview

4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126

BD6xxx Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current4 A
Maximum Collector-Emitter Voltage60 V
Processing package descriptionPLASTIC PACKAGE-3
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingTIN LEAD
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureDARLINGTON
Number of components1
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Maximum ambient power consumption40 W
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor750
Rated crossover frequency1 MHz
BD6xxx
Complementary power Darlington transistors
Features
.
Good h
FE
linearity
High f
T
frequency
Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
1
Applications
3
2
Linear and switching industrial equipment
SOT-32
Description
The devices are manufactured in planar base
island technology with monolithic Darlington
configuration.
Figure 1.
Internal schematic diagram
R1 typ.= 15 KΩ
R2 typ.= 100
Table 1.
Device summary
Marking
BD677
BD677A
BD678
BD678A
BD679
SOT-32
BD679A
BD680
BD680A
BD681
BD682
BD679A
BD680
BD680A
BD681
BD682
Rev 5
1/12
www.st.com
12
Order codes
BD677
BD677A
BD678
BD678A
BD679
Package
Packaging
Tube
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