MRF1570N datasheet, PDF - EEWORLD Datasheet

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MRF1570N: Description2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272; Categorysemiconductor Discrete semiconductor; File Size617KB，23 Pages; ManufacturerFREESCALE (NXP)

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MRF1570N Overview

2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272

MRF1570N Parametric

Parameter Name	Attribute value
Number of terminals	8
Minimum breakdown voltage	40 V
Processing package description	ROHS COMPLIANT, PLASTIC, CASE 1366A-03, 8 PIN
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
surface mount	Yes
Terminal form	FLAT
terminal coating	TIN
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	COMMON SOURCE, 2 ELEMENTS
Shell connection	SOURCE
Number of components	2
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	RF POWER
highest frequency band	ULTRA HIGH FREQUENCY BAND

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Freescale Semiconductor

Technical Data

Document Number: MRF1570N

Rev. 9, 6/2008

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequen-

cies up to 470 MHz. The high gain and broadband performance of these

devices make them ideal for large - signal, common source amplifier applica-

tions in 12.5 volt mobile FM equipment.

•

Specified Performance @ 470 MHz, 12.5 Volts

Output Power — 70 Watts

Power Gain — 11.5 dB

Efficiency — 60%

•

Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive

Features

•

Excellent Thermal Stability

•

Characterized with Series Equivalent Large - Signal Impedance Parameters

•

Broadband - Full Power Across the Band: 135 - 175 MHz

400 - 470 MHz

•

Broadband Demonstration Amplifier Information Available Upon Request

•

200_C Capable Plastic Package

•

N Suffix Indicates Lead - Free Terminations. RoHS Compliant.

•

In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MRF1570NT1

MRF1570FNT1

470 MHz, 70 W, 12.5 V

LATERAL N - CHANNEL

BROADBAND

RF POWER MOSFETs

CASE 1366 - 05, STYLE 1

TO - 272 - 8 WRAP

PLASTIC

MRF1570NT1

CASE 1366A - 03, STYLE 1

TO - 272 - 8

PLASTIC

MRF1570FNT1

Table 1. Maximum Ratings

Rating

Drain - Source Voltage

Gate - Source Voltage

Total Device Dissipation @ T

= 25°C

Derate above 25°C

Storage Temperature Range

Operating Junction Temperature

Symbol

DSS

stg

Value

+0.5, +40

165

0.5

- 65 to +150

200

Unit

Vdc

W/°C

°C

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Symbol

θJC

Value

(1)

0.29

Unit

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Human Body Model

Machine Model

Charge Device Model

Class

1 (Minimum)

M2 (Minimum)

C2 (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Per JESD 22 - A113, IPC/JEDEC J - STD - 020

Rating

Package Peak Temperature

260

Unit

°C

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

MRF1570NT1 MRF1570FNT1

RF Device Data

Freescale Semiconductor

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