EEWORLDEEWORLDEEWORLD

Part Number

Search

MRF19125R3

Description
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size414KB,12 Pages
ManufacturerFREESCALE (NXP)
Download Datasheet Parametric Compare View All

MRF19125R3 Overview

L BAND, Si, N-CHANNEL, RF POWER, MOSFET

MRF19125R3 Parametric

Parameter NameAttribute value
Number of terminals2
Minimum breakdown voltage65 V
Processing package descriptionROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shapeRectangle
Package SizeFlange mounting
surface mountYes
Terminal formFLAT
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsCeramic, Metal-SEALED COFIRED
structuresingle
Shell connectionsource
Number of components1
transistor applicationsamplifier
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeRF power
highest frequency bandL band
Freescale Semiconductor
Technical Data
Document Number: MRF19125
Rev. 6, 4/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
Typical 2 - Carrier N - CDMA Performance for V
DD
= 26 Volts,
I
DQ
= 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 24 Watts Avg.
Power Gain — 13.6 dB
Efficiency — 22%
ACPR —
- 51 dB
IM3 —
- 37.0 dBc
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 125 Watts CW
Output Power
Features
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF19125R3
MRF19125SR3
1930- 1990 MHz, 125 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF191225R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF19125SR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
330
1.89
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.53
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF19125R3 MRF19125SR3
1
RF Device Data
Freescale Semiconductor

MRF19125R3 Related Products

MRF19125R3 MRF19125 MRF19125SR3
Description L BAND, Si, N-CHANNEL, RF POWER, MOSFET L BAND, Si, N-CHANNEL, RF POWER, MOSFET L BAND, Si, N-CHANNEL, RF POWER, MOSFET
Number of terminals 2 2 2
Minimum breakdown voltage 65 V 65 V 65 V
Processing package description ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN NI-880, CASE 465B-03, 3 PIN ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN
state DISCONTINUED DISCONTINUED DISCONTINUED
packaging shape Rectangle Rectangle Rectangle
Package Size Flange mounting Flange mounting FLATPACK
surface mount Yes Yes Yes
Terminal form FLAT FLAT FLAT
Terminal location pair pair pair
Packaging Materials Ceramic, Metal-SEALED COFIRED Ceramic, Metal-SEALED COFIRED Ceramic, Metal-SEALED COFIRED
structure single single single
Shell connection source source source
Number of components 1 1 1
transistor applications amplifier amplifier amplifier
Transistor component materials silicon silicon silicon
Channel type N channel N channel N channel
field effect transistor technology Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT ENHANCEMENT
Transistor type RF power RF power RF power
highest frequency band L band L band L band
Lead-free Yes - Yes
EU RoHS regulations Yes - Yes
terminal coating NOT SPECIFIED - NOT SPECIFIED
Looking for an audio switching chip
I have used an audio switching chip (HEF4051BT) before, which is an eight-choice audio selection chip (but it can only switch mono audio). Now I want to find an audio switching chip that can switch bo...
小曹111 Analog electronics
Instructions for using the Dacai IoT serial port screen to browse audio and video files in USB flash drives and SD cards
[i=s]This post was last edited by dcolour2019 on 2019-7-2 14:36[/i]Dacai IoT serial port screen can traverse the files in the external U disk or SD card by adding LUA program. In the example project d...
dcolour2019 MCU
Wireless power feeding
[i=s] This post was last edited by paulhyde on 2014-9-15 03:30 [/i] It is said that wireless power transmission is very possible. This was related in 2007. I am preparing this module! The key is the e...
xxt Electronics Design Contest
[Data] Lingyang MCU SPCE061A chip data
[b][u][size=3][color=magenta]I am currently doing an internship and got some information about Lingyang MCU. I uploaded it to see if anyone needs it^_^[/color][/size][/u][/b] [u][color=deepskyblue]Inf...
SuperStar515 MCU
MSP430 implements serial communication parameter settings
[align=left][color=#000]To realize Yige's simple serial communication, MSP430 must meet the following conditions: [/color][/align][align=left][color=#000]1. Work in UATR mode [/color][/align][align=le...
rui Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2507  785  2926  906  2547  51  16  59  19  52 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号