Freescale Semiconductor
Technical Data
Document Number: MRF6S19200H
Rev. 0, 3/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio applications.
•
Typical Single - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1600 mA, P
out
= 56 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 17.9 dB
Drain Efficiency — 29.5%
Device Output Signal PAR — 5.9 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 36 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW
Output Power
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
•
Optimized for Doherty Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S19200HR3
MRF6S19200HSR3
1930 - 1990 MHz, 56 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S19200HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S19200HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
- 0.5, +66
- 6.0, +10
32, +0
- 65 to +150
150
225
130
0.49
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 110°C, 89 W CW
Case Temperature 100°C, 55 W CW
Symbol
R
θJC
Value
(2,3)
0.35
0.36
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF6S19200HR3 MRF6S19200HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 372
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1600 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3.71 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
0.1
2
3
0.2
3
4
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
10
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
2.3
185
503
—
—
—
pF
pF
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1600 mA, P
out
= 56 W Avg., f = 1932.5 MHz and
f = 1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
G
ps
η
D
PAR
ACPR
IRL
15
26
5.5
—
—
17.9
29.5
5.9
- 36
- 14
19
—
—
- 34
-8
dB
%
dB
dBc
dB
(continued)
MRF6S19200HR3 MRF6S19200HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1600 mA, 1930 - 1990 MHz Bandwidth
IMD Symmetry @ 130 W PEP, P
out
where IMD Third Order
IMD
sym
—
20
—
Intermodulation
`
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 56 W Avg.
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P
out
= 130 W CW
Average Group Delay @ P
out
= 130 W CW, f = 1960 MHz
Part - to - Part Insertion Phase Variation @ P
out
= 130 W CW,
f = 1960 MHz, Six Sigma Window
Gain Variation over Temperature
( - 30°C to +85°C)
VBW
res
G
F
Φ
Delay
ΔΦ
ΔG
—
—
—
—
—
—
50
0.6
1.94
2.44
59.4
0.04
—
—
—
—
—
—
MHz
dB
°
ns
°
dB/°C
MRF6S19200HR3 MRF6S19200HSR3
RF Device Data
Freescale Semiconductor
3
B1
V
BIAS
+
R1
C1
C2
R2
C4
Z8
RF
INPUT
Z5
Z1
C3
Z2
Z3
Z4
Z6
Z9
DUT
Z7
Z10
Z11
Z12
Z13
Z14
C13
C5
C7
C9
+
C11
+
C14
V
SUPPLY
Z15
RF
OUTPUT
V
SUPPLY
+
C6
C8
C10
C12
+
C15
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8, Z9
0.859″
0.470″
0.362″
0.145″
0.040″
0.418″
0.103″
0.198″
x 0.084″
x 0.084″
x 0.244″
x 1.040″
x 0.257″
x 1.040″
x 1.203″
x 0.160″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
PCB
0.547″ x 1.203″ Microstrip
0.119″ x 0.755″ Microstrip
0.222″ x 0.365″ Microstrip
0.225″ x 0.220″ Microstrip
0.192″ x 0.084″ Microstrip
0.843″ x 0.084″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 1. MRF6S19200HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S19200HR3(HSR3) Test Circuit Component Designations and Values
Part
B1
C1
C2, C9, C10
C3, C13
C4, C5, C6
C7, C8
C11, C12
C14, C15
R1
R2
Description
Short Ferrite Bead
10
μF,
50 V Electrolytic Capacitor
0.1
μF,
100 V Capacitors
33 pF Chip Capacitors
10 pF Chip Capacitors
10
μF,
50 V Capacitors
22
μF,
35 V Tantalum Capacitors
22
μF,
50 V Electrolytic Capacitors
1000
Ω,
1/4 W Chip Resistor
10
Ω,
1/4 W Chip Resistor
Part Number
2743019447
EMVY500ADA100MF55G
CDR33BX104AKYS
ATC100B330JT500XT
ATC100B100CT500XT
GRMSSDRG1H106KA88B
T491X226K035AT
EMVY500ADA220MF55G
CRCW12061001FKEA
CRCW120610R1FKEA
Manufacturer
Fair Rite
Nippon Chemi - Con
Kemet
ATC
ATC
Murata
Kemet
Nippon Chemi - Con
Vishay
Vishay
MRF6S19200HR3 MRF6S19200HSR3
4
RF Device Data
Freescale Semiconductor
B1
C7
C11
C5
R1
C4
C2
C1
R2
C9
C14
C3
CUT OUT AREA
C13
C10
C6
C15
C12
C8
MRF6S19200H/HS
Rev. 2
Figure 2. MRF6S19200HR3(HSR3) Test Circuit Component Layout
MRF6S19200HR3 MRF6S19200HSR3
RF Device Data
Freescale Semiconductor
5
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