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BU508AF_0708

Description
5 A, 700 V, NPN, Si, POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size198KB,11 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

BU508AF_0708 Overview

5 A, 700 V, NPN, Si, POWER TRANSISTOR

BU508AF_0708 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current5 A
Maximum Collector-Emitter Voltage700 V
stateDISCONTINUED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Number of components1
transistor applicationsamplifier
Transistor component materialssilicon
Transistor typeuniversal power supply
Minimum DC amplification factor2.25
BU508AF
High voltage NPN power transistor for standard
definition CRT display
Features
State-of-the-art technology:
– Diffused collector “Enhanced generation”
Stable performances versus operating
temperature variation
Low base-drive requirement
Tight h
FE
range at operating collector current
High ruggedness
Fully insulated power package U.L. compliant
1
2
3
ISOWATT218FX
Applications
Horizontal deflection output for CRT TV
Switch mode power supplies for CRT TV
Figure 1.
Internal schematic diagram
Description
The BU508AF is manufactured using diffused
collector in planar technology adopting new and
enhanced high voltage structure for updated
performance to the horizontal deflection stage.
Table 1.
Device summary
Marking
BU508AF
Package
ISOWATT218FX
Packaging
Tube
Order code
BU508AF
August 2007
Rev 2
1/11
www.st.com
11
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