®
BUL310FP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125
o
C
LARGE RBSOA
FULLY MOLDED INSULATED PACKAGE
2000 V DC INSULATION (U.L. COMPLIANT)
APPLICATIONS
s
HORIZONTAL DEFLECTION FOR COLOUR
TV
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
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FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
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DESCRIPTION
The BUL310FP is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
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INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
April 2003
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
<5 ms)
Base Current
Base Peak Current (t
p
<5 ms)
Total Dissipation at Tc = 25
o
C
Storage Temperature
Max. Operating Junction Temperature
Value
1000
500
9
5
10
3
4
36
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
C
o
C
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BUL310FP
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
3.5
62.5
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CES
I
CEO
Parameter
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
B
= 0)
Test Conditions
V
CE
= 1000 V
V
CE
= 1000 V
V
CE
= 500 V
I
C
= 100 mA
L= 25 mH
500
T
j
= 125 C
o
Min.
Typ.
Max.
100
500
250
Unit
µA
µA
µA
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EBO
V
CE(sat)
∗
Emitter-Base Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
INDUCTIVE LOAD
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
Fall Time
I
E
= 10 mA
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
C
= 10 mA
I
C
= 3 A
I
B
= 0.2 A
I
B
= 0.4 A
I
B
= 0.6 A
I
B
= 0.2 A
I
B
= 0.4 A
I
B
= 0.6 A
9
V
BE(sat)
∗
h
FE
∗
t
s
t
f
t
s
t
f
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
Safe Operating Areas
O
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I
C
= 2 A
V
BE(off)
= -5 V
V
CL
= 250 V
(see figure 1)
I
C
= 2 A
V
BE(off)
= -5V
V
CL
= 250 V
T
j
= 125
o
C
s)
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-
V
CE
= 5 V
V
CE
= 2.5 V
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P
10
6
d
o
10
1.2
80
ct
u
0.5
0.7
1.1
1
1.1
1.2
14
1.9
160
s)
(
V
V
V
V
V
V
V
V
I
B1
= 0.4 A
R
BB
= 0
Ω
L = 200
µH
µs
ns
I
B1
= 0.4 A
R
BB
= 0
Ω
L = 200
µH
(see figure 1)
1.8
150
µs
ns
Derating Curve
2/6
BUL310FP
Reverse Biased SOA
Figure 1:
Inductive Load Switching Test Circuit
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(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
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