®
BUL310
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERISED AT 125
o
C
LARGE RBSOA
TO-220
3
1
2
APPLICATIONS
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
<5 ms)
Base Current
Base Peak Current (t
p
<5 ms)
Total Dissipation at Tc = 25
o
C
Storage Temperature
Max. Operating Junction Temperature
Value
1000
500
9
5
10
3
4
75
-65 to 150
150
Unit
V
V
V
V
A
A
A
W
o
o
C
C
February 2002
1/6
BUL310
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
1.65
62.5
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CES
I
CEO
Parameter
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
B
= 0)
Test Conditions
V
CE
= 1000 V
V
CE
= 1000 V
V
CE
= 500 V
I
C
= 100 mA
L= 25 mH
500
T
j
= 125 C
o
Min.
Typ.
Max.
100
500
250
Unit
µA
µA
µA
V
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EBO
V
CE(sat)
∗
Emitter-Base Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
INDUCTIVE LOAD
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
Fall Time
I
E
= 10 mA
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
C
= 10 mA
I
C
= 3 A
I
C
= 2 A
V
BE(off)
= -5 V
V
CL
= 250 V
(see figure 1)
I
C
= 2 A
V
BE(off)
= -5V
V
CL
= 250 V
T
j
= 125
o
C
I
B
= 0.2 A
I
B
= 0.4 A
I
B
= 0.6 A
I
B
= 0.2 A
I
B
= 0.4 A
I
B
= 0.6 A
V
CE
= 5 V
V
CE
= 2.5 V
I
B1
= 0.4 A
R
BB
= 0
Ω
L = 200
µH
I
B1
= 0.4 A
R
BB
= 0
Ω
L = 200
µH
(see figure 1)
9
0.5
0.7
1.1
1
1.1
1.2
10
6
10
1.2
80
14
1.9
160
V
V
V
V
V
V
V
V
BE(sat)
∗
h
FE
∗
t
s
t
f
µs
ns
t
s
t
f
1.8
150
µs
ns
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
Safe Operating Areas
Derating Curve
2/6
BUL310
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Inductive Load Fall Time
Inductive Load Storage Time
3/6
BUL310
Reverse Biased SOA
Figure 1:
Inductive Load Switching Test Circuit
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
4/6
Microcontroller MCU
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