Freescale Semiconductor
Technical Data
Document Number: MRF21060
Rev. 9, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and
multicarrier amplifier applications.
•
Typical 2 - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 500 mA,
P
out
= 6 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84
MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 12.5 dB
Drain Efficiency — 15%
ACPR @ 5 MHz Offset — - 47 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
μ″
Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MRF21060LR3
MRF21060LSR3
2110 - 2170 MHz, 60 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF21060LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF21060LSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
180
0.98
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
1.02
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF21060LR3 MRF21060LSR3
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10
μAdc)
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 500 mAdc)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
Two - Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
3rd Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
P
out
, 1 dB Compression Point
(V
DD
= 28 Vdc, P
out
= 60 W CW, f = 2170 MHz)
1. Part is internally matched both on input and output.
G
ps
11
12.5
—
dB
C
rss
—
2.7
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
2
2.5
—
—
3.9
0.27
4
4.5
—
Vdc
Vdc
Vdc
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
6
1
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
η
31
34
—
%
IMD
—
- 30
- 28
dBc
IRL
—
- 12
—
dB
P1dB
—
60
—
W
MRF21060LR3 MRF21060LSR3
2
RF Device Data
Freescale Semiconductor
R4
V
GG
+
+
C1
R2
C2
C3
C4
C5
R1
R3
+
C6
C7
C8
B2
B3
V
DD
+
Z8
Z9
Z10
RF
INPUT
Z1
C9
C10
Z2
Z3
Z4
Z5
Z6
Z7
Z11
Z12
Z13
Z14
C11
C12
Z15
RF
OUTPUT
DUT
B2 - B3
C1
C2, C7
C3, C8
C4, C5
C6
C9, C11
C10
C12
R1
R2
R3
R4
Z1
Z2
Ferrite Beads, Fair Rite #2743019447
10
μF,
50 V Electrolytic Chip Capacitor, Panasonic #ECEV1HV100R
1000 pF Chip Capacitors, ATC #100B102JCA500X
0.10
μF
Chip Capacitors, Kemet #CDR33BX104AKWS
4.7 pF Chip Capacitors, ATC #100B4R7JCA500X
22
μF,
35 V Tantalum Surface Mount Chip Capacitor, Sprague
9.1 pF Chip Capacitors, ATC #100B9R1JCA500X
0.8 pF - 8.0 pF Variable Capacitor, Johanson Gigatrim
0.4 pF - 4.5 pF Variable Capacitor, Johanson Gigatrim
1 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″
560 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″
10
Ω,
1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″
10
Ω,
1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″
0.743″ x 0.080″ Microstrip
0.070″ x 0.100″ Microstrip
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Z14
Z15
Board
0.180″ x 0.100″ Microstrip
0.152″ x 0.293″ Microstrip
0.216″ x 0.100″ Microstrip
0.114″ x 0.410″ Microstrip
0.626″ x 0.872″ Microstrip
1.050″ x 0.050″ Microstrip
0.830″ x 0.050″ Microstrip
0.596″ x 1.040″ Microstrip
0.186″ x 0.315″ Microstrip
0.097″ x 0.525″ Microstrip
0.353″ x 0.138″ Microstrip
0.112″ x 0.080″ Microstrip
0.722″ x 0.080″ Microstrip
0.030″ Glass Teflon
®
, Arlon
GX - 0300- 55- 22, 2 oz Cu
Figure 1. MRF21060L Test Circuit Schematic
MRF21060LR3 MRF21060LSR3
RF Device Data
Freescale Semiconductor
3
TO GATE
BIAS
FEEDTHRU
C1 R1
C2 C3 C4
R2
R3
C5
C6
R4
C7
C8
B2
B3
TO DRAIN
BIAS
FEEDTHRU
C9
C11
C10
C12
MRF21060
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF21060L Test Circuit Component Layout
MRF21060LR3 MRF21060LSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
40
35
30
25
20
15
10
5
0
2080
2100
2120
2140
2160
f, FREQUENCY (MHz)
2180
IRL
V
DD
= 28 Vdc
P
out
= 60 W (PEP), I
DQ
= 500 mA
Two−Tone Measurement, 100 kHz Tone Spacing
G
ps
IMD
−35
−40
2200
η
0
−5
−10
−15
−20
−25
−30
η
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
45
V
DD
= 28 Vdc
I
DQ
= 700 mA, f = 2140 MHz, Channel Spacing
(Channel Bandwidth): 5 MHz @ 4.096 MHz BW
15 DTCH
−20
−25
−30
−35
−40
ACPR
η
G
ps
−45
−50
−55
2
10
4
8
12
6
14
P
out
, OUTPUT POWER (WATTS Avg.) W−CDMA
−60
16
ADJACENT CHANNEL POWER RATIO (dB)
IMD, INTERMODULATION DISTORTION (dBc)
40
35
30
25
20
15
10
5
Figure 3. Class AB Broadband Circuit Performance
Figure 4. W - CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
−25
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
−30
−35
−40
900 mA
−45
−50
−55
−60
−65
0.1
10
1.0
P
out
, OUTPUT POWER (WATTS) PEP
100
500 mA
700 mA
V
DD
= 28 Vdc
f = 2140 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
−20
−30
−40
3rd Order
−50
−60
−70
−80
0.1
5th Order
7th Order
V
DD
= 28 Vdc
I
DQ
= 700 mA, f = 2140 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
1.0
10
P
out
, OUTPUT POWER (WATTS) PEP
100
Figure 5. Intermodulation Distortion
versus Output Power
Figure 6. Intermodulation Distortion Products
versus Output Power
14
900 mA
G ps , POWER GAIN (dB)
13
G ps , POWER GAIN (dB)
700 mA
12
500 mA
11
14
P
out
= 60 W (PEP), I
DQ
= 500 mA
f = 2140 MHz
Two−Tone Measurement,
100 kHz Tone Spacing
IMD
13
G
ps
12.5
−22
−24
−26
−28
−30
−32
−34
−36
13.5
V
DD
= 28 Vdc
f = 2140 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
1.0
10
100
10
0.1
12
22
24
26
28
30
−38
32
P
out
, OUTPUT POWER (WATTS) PEP
V
DD
, DRAIN VOLTAGE (VOLTS)
Figure 7. Power Gain versus Output Power
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
MRF21060LR3 MRF21060LSR3
RF Device Data
Freescale Semiconductor
5
京公网安备 11010802033920号
EEWORLD
