Freescale Semiconductor
Technical Data
Document Number: MRF281
Rev. 5, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for digital and analog cellular PCN and PCS base station
applications with frequencies from 1000 to 2500 MHz. Characterized for
operation Class A and Class AB at 26 volts in commercial and industrial
applications.
•
Specified Two - Tone Performance @ 1930 and 2000 MHz, 26 Volts
Output Power — 4 Watts PEP
Power Gain — 11 dB
Efficiency — 30%
Intermodulation Distortion — - 29 dBc
•
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 4 Watts CW Output Power
Features
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
S - Parameter Characterization at High Bias Levels
•
RoHS Compliant
•
Available in Tape and Reel. R1 Suffix = 500 Units per
12 mm, 7 inch Reel.
MRF281SR1
MRF281ZR1
2000 MHz, 4 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 458B - 03, STYLE 1
NI - 200S
MRF281SR1
CASE 458C - 03, STYLE 1
NI - 200Z
MRF281ZR1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
±
20
20
0.115
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
5.74
Unit
°C/W
Table 3. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain - Source Breakdown Voltage
(V
GS
= 0, I
D
= 10
μAdc)
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0)
Gate - Source Leakage Current
(V
GS
= 20 Vdc, V
DS
= 0)
V
(BR)DSS
I
DSS
I
GSS
65
—
—
74
—
—
—
10
1
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF281SR1 MRF281ZR1
1
RF Device Data
Freescale Semiconductor
Table 3. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 20
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 25 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 0.1 A)
Dynamic Characteristics
Input Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
Output Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
Functional Tests
(In Freescale Test Fixture)
Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 4 W, I
DQ
= 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 4 W PEP, I
DQ
= 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 4 W CW, I
DQ
= 25 mA,
f1 = 2000.0 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 4 W CW, I
DQ
= 25 mA,
f1 = 2000.0 MHz)
G
ps
11
12.5
—
dB
C
iss
C
oss
C
rss
—
—
—
5.5
3.3
0.17
—
—
—
pF
pF
pF
V
GS(th)
V
GS(q)
V
DS(on)
2.4
3
0.18
3.2
4.1
0.24
4
5
0.30
Vdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
η
30
33
—
%
IRL
—
- 16
- 10
dB
IMD
—
- 31
- 29
dBc
G
ps
11
12.5
—
dB
η
30
—
—
%
IRL
—
- 16
- 10
dB
IMD
—
- 31
—
dBc
G
ps
10.5
12
—
dB
η
40
44
—
%
MRF281SR1 MRF281ZR1
2
RF Device Data
Freescale Semiconductor
Z
o
= 25
Ω
f = 2000 MHz
Z
in
f = 2000 MHz
f = 1500 MHz
Z
OL
*
f = 1500 MHz
V
DD
= 26 V, I
DQ
= 25 mA, P
out
= 4 W (PEP)
f
MHz
1500
1600
1700
1800
1900
2000
Z
in
Z
in
Ω
3.15 - j5.3
3.1 - j3.8
3.1 - j2.3
3.1 - j0.7
3.1 + j0.9
3.1 + j2.4
Z
OL
*
Ω
15.5 - j13.6
14.7 - j12.5
14.0 - j11.7
13.4 - j11.0
12.8 - j10.1
12.2 - j9.2
= Complex conjugate of source impedance.
Z
OL
* = Complex conjugate of the optimum load
impedance at given output power, voltage,
IMD, bias current and frequency.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z
in
Z
*
OL
Figure 1. Series Equivalent Input and Output Impedance
MRF281SR1 MRF281ZR1
RF Device Data
Freescale Semiconductor
3
Power technology
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