2SK1515, 2SK1516
Silicon N Channel MOS FET
REJ03G0946-0200
(Previous: ADE-208-1286)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
Built-in fast recovery diode (t
rr
= 120 ns)
Suitable for motor control, switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
3
1
2
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1515, 2SK1516
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at T
C
= 25
°
C
2SK1515
2SK1516
V
GSS
I
D
I
D(pulse)
*
I
DR
2
Pch*
Tch
Tstg
1
Symbol
V
DSS
Ratings
450
500
±30
10
30
10
100
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source
breakdown voltage
2SK1515
2SK1516
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
450
500
±30
—
—
2.0
—
—
4.0
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.6
0.7
7.0
1100
310
50
15
65
95
55
1.0
120
Max
—
—
±10
250
3.0
0.8
0.9
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 360 V, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
3
I
D
= 5 A, V
GS
= 10 V *
I
D
= 5 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 5 A, V
GS
= 10 V,
R
L
= 6
Ω
3
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain 2SK1515
current
2SK1516
Gate to source cutoff voltage
Static drain to source on 2SK1515
state resistance
2SK1516
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
I
F
= 10 A, V
GS
= 0
I
F
= 10 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1515, 2SK1516
Main Characteristics
Power vs. Temperature Derating
120
Maximum Safe Operation Area
50
10
ar
Channel Dissipation Pch (W)
20
ea
0
10
O
is per
lim at
ite ion
d in
by th
R is
Drain Current I
D
(A)
(o
10
5
2
1
0.5
0.2
0.1
0.05
PW
pe
O
µ
s
n)
=
µ
s
DS
80
10
1
C
D
ra
m
s
(1
sh
ot
pu
ls
e)
)
°
C
25
m
s
n
tio
(T
C
=
40
Ta = 25
°
C
1
3
10
2SK1515
2SK1516
30
100
300 1,000
0
50
100
150
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
10 V
7V
6V
20
Typical Transfer Characteristics
V
DS
= 20 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
16
Pulse Test
16
–25°C
Ta = 25°C
12
5V
12
75°C
8
8
4
V
GS
= 4 V
0
10
20
30
40
50
4
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
10 A
6
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5
0.2
0.1
0.05
0.5
15 V
V
GS
= 10 V
Drain to Source Saturation Voltage V
DS (on)
(V)
4
5A
2
I
D
= 2 A
0
4
8
12
16
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
20
1
2
5
10
20
50
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1515, 2SK1516
Static Drain to Source on State
Resistance vs. Temperature
2.0
V
GS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
50
V
DS
= 20 V
Pulse Test
20
10
5
2
1
0.5
0.1
T
C
= –25°C
25°C
75°C
1.6
1.2
I
D
= 10 A
0.8
2, 5 A
0.4
0
–40
0
40
80
120
160
0.2
0.5
1
2
5
10
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
5,000
5,000
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time trr (ns)
Capacitance C (pF)
2,000
1,000
500
1,000
Ciss
Coss
100
200
100
50
0.2
10
0.5
1
2
5
10
20
5
0
10
20
Crss
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
500
V
DD
= 100 V
250 V
400 V
V
GS
20
500
Switching Characteristics
V
GS
= 10 V, V
DD
= 30 V
PW = 2
µs,
duty
≤
1 %
V
DS
Switching Time t (ns)
400
16
200
100
50
t
f
t
r
t
d (off)
300
12
200
V
DD
= 400 V
250 V
100 V
8
16
24
8
20
10
5
0.2
100
I
D
= 7 A
t
d (on)
4
0
0
32
40
0.5
1
2
5
10
20
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1515, 2SK1516
Reverse Drain Current vs.
Source to Drain Voltage
20
Reverse Drain Current I
DR
(A)
Pulse Test
16
12
15 V
8
10 V
4
V
GS
= 0, –10 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance
γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
0.5
0.3
0.2
0.1
1.0
T
C
= 25°C
0.1
0.05
θch–c
(t) =
γ
S
(t)
• θch–c
θch–c
= 1.25°C/W, T
C
= 25°C
P
DM
PW
D = PW
T
0.02
0.03
0.01
10
µ
0.01
Pulse
hot
1S
T
1m
10 m
100 m
100
µ
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Vout Monitor
D.U.T.
R
L
Vout
Vin
10 V
50
Ω
V
DD
.
= 30 V
.
t
d (on)
Vin
10%
10%
Waveforms
90%
10%
90%
t
d (off)
t
f
90%
t
r
Rev.2.00 Sep 07, 2005 page 5 of 6
京公网安备 11010802033920号
EEWORLD
