2SK1519, 2SK1520
Silicon N Channel MOS FET
REJ03G0948-0300
(Previous: ADE-208-1288)
Rev.3.00
Apr 27, 2006
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
Built-in fast recovery diode (t
rr
= 120 ns)
Suitable for motor control, switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
D
G
1. Gate
2. Drain
3. Source
1
S
2
3
Rev.3.00 Apr 27, 2006 page 1 of 6
2SK1519, 2SK1520
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
2SK1519
2SK1520
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
450
500
±30
30
120
30
200
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at T
C
= 25
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source
breakdown voltage
2SK1519
2SK1520
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain 2SK1519
current
2SK1520
Gate to source cutoff voltage
Static drain to source on 2SK1519
state resistance
2SK1520
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
450
500
±30
—
—
2.0
—
—
15
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.11
0.12
25
5800
1550
170
65
170
415
200
1.1
120
Max
—
—
±10
250
3.0
0.15
0.16
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 360 V, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 15 A, V
GS
= 10 V *
3
I
D
= 15 A, V
DS
= 10 V *
3
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 15 A, V
GS
= 10 V,
R
L
= 2
Ω
I
F
= 30 A, V
GS
= 0
I
F
= 30 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.3.00 Apr 27, 2006 page 2 of 6
2SK1519, 2SK1520
Main Characteristics
Power vs. Temperature Derating
300
Maximum Safe Operation Area
1,000
300
rea
s a
n)
10
thi
o
in R
DS (
10
µ
s
0
µ
ion y
PW
rat ted b
s
e i
1
m
=
Op lim
DC
10
s
is
Op
ms
er
(1
ati
Sh
on
ot)
(T
C
=
25
°
C
)
Channel Dissipation Pch (W)
Drain Current I
D
(A)
100
30
10
3
1
0.3
0.1
200
100
Ta = 25
°
C
1
3
10
30
2SK1519
2SK1520
100
300
1,000
0
50
100
150
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
6V
10 V
5V
Pulse Test
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
40
40
30
4.5 V
20
30
20
T
C
= 75°C
25°C
–25°C
10
V
GS
= 4 V
10
0
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
I
D
= 50 A
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5
Drain to Source Saturation Voltage V
DS (on)
(V)
6
4
20 A
2
10 A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.2
0.1
0.05
2
5
10
20
50
100
200
V
GS
= 10 V, 15 V
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.3.00 Apr 27, 2006 page 3 of 6
2SK1519, 2SK1520
Static Drain to Source on State
Resistance vs. Temperature
0.5
V
GS
= 10 V
Pulse Test
I
D
= 50 A
0.3
20 A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
100
50
V
DS
= 10 V
Pulse Test
T
C
= –25°C
25°C
75°C
0.4
20
10
5
0.2
10 A
0.1
2
1
0.5
0
–40
0
40
80
120
160
1
2
5
10
20
50
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
1,000
10,000
di/dt = 100 A/µs, V
GS
= 0
Pulse Test
Capacitance C (pF)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Reverse Recovery Time t rr (ns)
500
200
100
50
1,000
Coss
100
Crss
V
GS
= 0
f = 1 MHz
10
20
10
0.5
1
2
5
10
20
50
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
1,000
V
DD
= 100 V
250 V
400 V
V
GS
V
DS
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
1,000
500
t
d (off)
Switching Time t (ns)
800
16
600
12
200
100
50
t
r
t
f
400
8
t
d (on)
200
V
DD
= 400 V
250 V
100 V
80
160
240
I
D
= 30 A
Pulse Test
320
400
4
20
10
0.5
V
GS
= 10 V, PW = 2
µs
.
duty < 1%, V
DD
= 30 V
.
1
2
5
10
20
50
0
0
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.3.00 Apr 27, 2006 page 4 of 6
2SK1519, 2SK1520
Reverse Drain Current vs.
Source to Drain Voltage
50
Reverse Drain Current I
DR
(A)
Pulse Test
40
30
20
10 V
GS
= 0, –5 V
10 V
0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance
γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
T
C
= 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θch–c
(t) =
γ
S
(t)
• θch–c
θch–c
= 0.625°C/W, T
C
= 25°C
P
DM
PW
D = PW
T
0.02
0.03
0.01
lse
t Pu
Sho
1
T
100
µ
1m
10 m
100 m
0.01
10
µ
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Waveforms
90%
Vout Monitor
D.U.T
Vin
10%
10%
90%
t
d (on)
t
r
90%
t
d (off)
t
f
10%
R
L
50
Ω
Vin
10 V
V
DD
.
= 30 V
.
Vout
Rev.3.00 Apr 27, 2006 page 5 of 6
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