2SK1405
Silicon N Channel MOS FET
REJ03G0945-0300
Rev.3.00
May 15, 2006
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
Built-in fast diode (t
rr
= 140 ns)
Suitable for motor control, switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
D
G
1. Gate
2. Drain
3. Source
S
1
2
3
Rev.3.00 May 15, 2006 page 1 of 6
2SK1405
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at T
C
= 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)*1
I
DR
Pch
*2
Tch
Tstg
Ratings
600
±30
15
60
15
60
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
600
±30
—
—
2.0
—
9
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.35
14
3150
780
110
35
120
240
100
1.0
140
Max
—
—
±10
250
3.0
0.50
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 500 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 8 A, V
GS
= 10 V *
3
I
D
= 8 A, V
DS
= 10 V *
3
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 8 A, V
GS
= 10 V,
R
L
= 3.75
Ω
I
F
= 15 A, V
GS
= 0
I
F
= 15 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.3.00 May 15, 2006 page 2 of 6
2SK1405
Main Characteristics
Power vs. Temperature Derating
80
Maximum Safe Operation Area
100
30
ea
ar
is
(on)
th
S
in
n y R
D
PW
tio b
ra d
pe mite
=
O li
10
DC
is
Channel Dissipation Pch (W)
60
Drain Current I
D
(A)
10
3
1
0.3
0.1
0.03
0.01
40
20
1
m
s
m
Op
s(
er
1
at
ion
Sho
tp
(T
uls
C
=
25
e)
°
C
)
1
10
0
µ
s
0
µ
s
Ta = 25
°
C
1
3
10
30
100
300 1,000
0
50
100
150
200
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
10 V
6V
5V
Pulse Test
12
4.5 V
20
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
16
16
12
8
8
4
V
GS
= 4 V
4
T
C
= 75°C
25°C
–25°C
0
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
20 A
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5
0.2
0.1
0.05
1
2
5
10
20
50
100
V
GS
= 10, 15 V
Drain to Source Saturation Voltage V
DS (on)
(V)
6
4
10 A
I
D
= 5 A
2
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Drain Current I
D
(A)
Rev.3.00 May 15, 2006 page 3 of 6
2SK1405
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
2.0
Pulse Test
1.6
50
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
20
10
5
2
1
0.5
0.2
T
C
= –25°C
25°C
75°C
1.2
10 A
0.8
I
D
= 20 A
V
GS
= 10 V
5A
0.4
V
DS
= 10 V
Pulse Test
0.5
1
2
5
10
20
0
–40
0
40
80
120
160
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
500
10,000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time trr (ns)
Ciss
Capacitance C (pF)
200
100
50
1,000
Coss
100
20
10
5
0.2
di/dt = 100 A/µs, V
GS
= 0
Ta = 25°C
Pulse Test
0.5
1
2
5
10
20
V
GS
= 0
f = 1 MHz
10
0
10
20
30
Crss
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
1,000
V
DD
= 100 V
250 V
400 V
V
GS
20
500
Switching Characteristics
t
d (off)
Switching Time t (ns)
800
16
200
t
f
100
50
t
r
t
d (on)
600
12
400
V
DS
I
D
= 15 A
V
DD
= 400 V
250 V
100 V
8
20
10
5
0.2
V
GS
= 10 V, V
DD
= 30 V
PW = 2
µs,
duty
≤
1 %
0.5
1
2
5
10
20
200
4
0
0
40
80
120
160
200
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.3.00 May 15, 2006 page 4 of 6
2SK1405
Reverse Drain Current vs.
Source to Drain Voltage
20
Reverse Drain Current I
DR
(A)
Pulse Test
16
12
8
V
GS
=
0, –5
V
10 V
4
0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V
SD
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
0.02
θch
– c (t) =
γ
s (t) •
θch
– c
θch
– c = 2.08°C/W, Tc = 25°C
P
DM
u
tp
lse
D=
PW
T
0.03
0.0
PW
T
1
1
o
sh
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
Vout
Vin
10 V
50
Ω
V
DD
= 30 V
td(on)
10%
Vout
Monitor
Vin
10%
Waveform
90%
10%
90%
tr
90%
td(off)
tf
Rev.3.00 May 15, 2006 page 5 of 6
DSP and ARM Processors
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