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2SK1637

Description
Silicon N Channel MOS FET
CategoryDiscrete semiconductor    The transistor   
File Size75KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SK1637 Overview

Silicon N Channel MOS FET

2SK1637 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codeTO-220AB
package instructionTO-220FM, 3 PIN
Contacts3
Reach Compliance Codeunknown
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)4 A
Maximum drain current (ID)4 A
Maximum drain-source on-resistance2.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)35 W
Maximum pulsed drain current (IDM)16 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SK1637
Silicon N Channel MOS FET
REJ03G0962-0200
(Previous: ADE-208-1305)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Rev.2.00 Sep 07, 2005 page 1 of 6

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