2SK1636(L), 2SK1636(S)
Silicon N Channel MOS FET
REJ03G0961-0200
(Previous: ADE-208-1304)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
4
4
G
1. Gate
2. Drain
3. Source
4. Drain
S
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
1
1
2
3
2
3
Rev.2.00 Sep 07, 2005 page 1 of 7
2SK1636(L), 2SK1636(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at T
C
= 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch*
Tch
2
1
Ratings
250
±30
15
60
15
75
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
Tstg
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
250
±30
—
—
2.0
—
6.0
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.22
10.0
1250
510
85
24
85
110
60
1.0
400
Max
—
—
±10
250
3.0
0.27
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 200 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 8 A, V
GS
= 10 V *
I
D
= 8 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 8 A, V
GS
= 10 V,
R
L
= 3.75
Ω
3
3
I
F
= 15 A, V
GS
= 0
I
F
= 15 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 7
2SK1636(L), 2SK1636(S)
Main Characteristics
Power vs. Temperature Derating
120
100
O
is per
lim at
ite ion
d in
by th
R is
ar
DS
ea
(o
n
Maximum Safe Operation Area
Channel Dissipation Pch (W)
10
30
10
1
PW
)
µ
s
Drain Current I
D
(A)
0
µ
s
m
80
10
3
1
0.3
s
=
10
D
C
O
pe
s
m
(1
ot
Sh
n
=
(T
C
tio
ra
)
40
25
°
C
)
Ta = 25°C
0.1
0
50
100
150
1
3
10
30
100
300 1,000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
20
10 V
8V
5.5 V
20
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
12
5V
Drain Current I
D
(A)
16
Pulse Test
16
12
8
4.5 V
4
4V
V
GS
= 3.5 V
0
4
8
12
16
20
8
Ta = 75
°
C
25
°
C
–25
°
C
4
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
Drain to Source Saturation Voltage V
DS (on)
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
2
1
0.5
V
GS
= 10 V
15 V
6
4
I
D
= 15 A
10 A
0.2
0.1
0.05
1
2
5
10
20
2
5A
0
2
4
6
8
10
50
100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 7
2SK1636(L), 2SK1636(S)
Static Drain to Source on State
Resistance vs. Temperature
1.0
Pulse Test
V
GS
= 10 V
0.8
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
50
V
DS
= 10 V
Pulse Test
20
T
C
= –25°C
10
5
25°C
75°C
0.6
I
D
= 15 A
0.4
5A
0.2
10 A
2
1
0.5
0.5
0
–40
0
40
80
120
160
1
2
5
10
20
50
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
1,000
10,000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
V
GS
= 0
f = 1 MHz
Ciss
1,000
Coss
200
100
50
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
100
Crss
20
10
0.5
10
1
2
5
10
20
50
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
500
20
V
DD
= 50 V
100 V
200 V
V
GS
I
D
= 15 A
V
DS
Switching Characteristics
Gate to Source Voltage V
GS
(V)
500
Drain to Source Voltage V
DS
(V)
Switching Time t (ns)
400
16
200
t
d (off)
100
t
f
50
t
r
20
10
5
0.2
V
GS
= 10 V, PW = 2
µs
duty < 1%
0.5
1
2
5
10
20
t
d (on)
300
12
200
8
100
V
DD
= 200 V
100 V
50 V
20
40
60
80
100
4
0
0
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 7
2SK1636(L), 2SK1636(S)
Reverse Drain Current vs.
Source to Drain Voltage
20
Reverse Drain Current I
DR
(A)
Pulse Test
16
12
8
V
GS
= 10 V
V
GS
= 0, –5 V
4
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance
γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
0.5
0.3
0.1
0.2
0.1
0.05
0.02
1S
uls
ot P
h
e
1.0
T
C
= 25°C
θch–c
(t) =
γ
S
(t)
• θch–c
θch–c
= 1.67°C/W, T
C
= 25°C
P
DM
PW
1
D = PW
T
0.03
0.01
0.01
10
µ
T
1m
10 m
100 m
100
µ
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Vout Monitor
D.U.T
R
L
50
Ω
Vin
10 V
Vin
Vout
10%
10%
Waveforms
90%
10%
90%
t
d (off)
V
DD
.
= 30 V
.
t
d (on)
90%
t
r
t
f
Rev.2.00 Sep 07, 2005 page 5 of 7
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