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MJE18604D2AK

Description
3A, 800V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size387KB,61 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

MJE18604D2AK Overview

3A, 800V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

MJE18604D2AK Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT-IN ANTISATURATION NETWORK
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-emitter maximum voltage800 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)20
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)13 MHz
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE18604D2
Advance Information
High Speed, High Gain Bipolar
NPN Power Transistor with
Integrated Collector-Emitter
Diode and Built-in Efficient
Antisaturation Network for
1600 V Applications
The MJE18604D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make
it ideally suitable for light ballast applications. Therefore, there is no more a need to
guarantee an hfe window.
Main features:
Low Base Drive Requirement
High DC Current Gain (30 Typical) @ IC = 400 mA
Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active
Antisaturation (H2BIP) Structure which Minimizes the Spread
Integrated Collector–Emitter Free Wheeling Diode Matched with the Power
Transistor
Fully Characterized and Guaranteed Dynamic VCE(sat)
“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
POWER TRANSISTORS
3 AMPERES
1600 VOLTS
100 WATTS
CASE 221A–06
TO–220AB
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MAXIMUM RATINGS
Rating
Symbol
VCEO
VCER
Value
800
800
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Breakdown Voltage
Collector–Emitter Sustaining Voltage @ R = 200
Collector–Base Breakdown Voltage
VCBO
VCES
1600
1600
12
3
8
2
4
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
VEBO
IC
ICM
IB
IBM
PD
Collector Current — Continuous
— Peak (1)
Base Current — Continuous
Base Current
— Peak (1)
*Total Device Dissipation @ TC = 25
_
C
*Derate above 25°C
Operating and Storage Temperature
100
0.8
Watt
W/
_
C
TJ, Tstg
– 65 to 150
_
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θJC
R
θJA
TL
1.25
62.5
260
_
C/W
_
C
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Motorola Bipolar Power Transistor Device Data
3–779
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