2SK1671
Silicon N Channel MOS FET
REJ03G0967-0200
(Previous: ADE-208-1312)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter and motor drive
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
3
1
2
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1671
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at T
C
= 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Tch
*1
Ratings
250
±30
30
120
30
125
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
*2
Tstg
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
250
±30
—
—
2.0
—
12
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.075
20
3000
1250
170
45
170
250
130
1.0
400
Max
—
—
±10
250
3.0
0.095
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 200 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 15 A, V
GS
= 10 V *
I
D
= 15 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 15 A, V
GS
= 10 V,
R
L
= 2
Ω
3
3
I
F
= 30 A, V
GS
= 0
I
F
= 30 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1671
Main Characteristics
Power vs. Temperature Derating
150
Maximum Safe Operation Area
1,000
300
a
are
is
(on)
th
in R
DS
n
10
tio by
10
µ
s
era ited
0
µ
Op lim
P
s
DC
W
1
is
Op
= 10
ms
er
ati
ms
(1
on
Sh
(T
ot
C
=
25
)
°
C
)
Channel Dissipation Pch (W)
Drain Current I
D
(A)
100
30
10
3
1
0.3
0.1
100
50
Ta = 25
°
C
1
3
10
30
100
300
1,000
0
50
100
150
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
10 V
50
8V
6V
Pulse Test
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
40
40
V
DS
= 10 V
Pulse Test
30
5V
30
4.5 V
20
20
10
V
GS
= 4 V
10
T
C
= 75°C
25°C
–25°C
4
6
8
10
0
4
8
12
16
20
0
2
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
0.2
0.1
0.05
Pulse Test
Drain to Source Saturation Voltage V
DS (on)
(V)
4
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
3
V
GS
= 10, 15 V
2
I
D
= 20 A
1
10 A
5A
4
8
12
16
20
0.02
0.01
0.005
1
2
5
10
20
50
100
0
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1671
Static Drain to Source on State
Resistance vs. Temperature
0.2
V
GS
= 10 V
Pulse Test
0.16
I
D
= 30 A
20 A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
50
V
DS
= 10 V
Pulse Test
T
C
= –25°C
20
10
5
25°C
75°C
0.12
10 A
0.08
2
1
0.5
0.5
0.04
0
–40
0
40
80
120
160
1
2
5
10
20
50
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
500
10,000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time t rr (ns)
Ciss
Capacitance C (pF)
200
100
50
1,000
Coss
20
10
5
0.5
100
Crss
V
GS
= 0
f = 1 MHz
10
di/dt = 100 A/µs, V
GS
= 0
Ta = 25°C, Pulse Test
1
2
5
10
20
50
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
500
V
DD
= 50V
100 V
200 V
V
GS
20
500
Switching Characteristics
Gate to Source Voltage V
GS
(V)
t
d (off)
Switching Time t (ns)
400
16
200
100
t
r
50
20
10
5
0.5
.
V
GS
= 10 V, V
DD
= 30 V
.
PW = 2
µs,
duty < 1%
1
2
5
10
20
50
t
d (on)
t
f
300
V
DS
12
200
8
V
DD
= 200 V
100 V
50 V
40
80
120
100
4
I
D
= 30 A
Pulse Test
160
0
200
0
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1671
Reverse Drain Current vs.
Source to Drain Voltage
50
Reverse Drain Current I
DR
(A)
Pulse Test
40
30
20
V
GS
= 10 V
10
0, –5 V
0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance
γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0
D=1
0.5
0.3
0.1
0.2
0.1
0.05
T
C
= 25°C
θch–c
(t) =
γ
S
(t)
• θch–c
θch–c
= 1.0°C/W, T
C
= 25°C
P
DM
PW
1
D = PW
T
0.02
0.03
0.01
10
µ
e
0.01
t Puls
ho
1S
T
1m
10 m
100 m
100
µ
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Waveforms
90%
Vout Monitor
D.U.T
Vin
10%
10%
90%
t
d (on)
t
r
90%
t
d (off)
t
f
10%
R
L
50
Ω
Vin
10 V
Vout
V
DD
.
= 30 V
.
Rev.2.00 Sep 07, 2005 page 5 of 6
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