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2SK1697

Description
SMALL SIGNAL, FET
CategoryDiscrete semiconductor    The transistor   
File Size75KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

2SK1697 Overview

SMALL SIGNAL, FET

2SK1697 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)0.5 A
Maximum drain current (ID)0.5 A
Maximum drain-source on-resistance2.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-F3
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Bismuth (Sn/Bi)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SK1697
Silicon N-Channel MOS FET
REJ03G1373-0200
(Previous: ADE-208-1313)
Rev.2.00
May 11, 2006
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source.
Suitable for DC – DC converter, motor drive, power switch, solenoid drive
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK
R
)
3
2 1
G
4
D
1. Gate
2. Drain
3. Source
4. Drain
S
Note:
Marking is “EY”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
V
DSS
Gate to source voltage
V
GSS
Drain current
I
D
*1
Drain peak current
I
D(pulse)
Body to drain diode reverse drain current
I
DR
Channel dissipation
Pch
*2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW
10
µs,
duty cycle
1%
2. When using the alumina ceramic board (12.5
×
20
×
0.7 mm)
Ratings
60
±20
0.5
1.5
0.5
1
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Rev.2.00 May 11, 2006 page 1 of 6

2SK1697 Related Products

2SK1697 2SK1697EYTL-E 2SK1697EYTR-E
Description SMALL SIGNAL, FET 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET SMALL SIGNAL, FET
Is it Rohs certified? conform to conform to conform to
package instruction SMALL OUTLINE, R-PSSO-F3 SC-62, UPAK-3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 4 4
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V
Maximum drain current (Abs) (ID) 0.5 A 0.5 A 0.5 A
Maximum drain current (ID) 0.5 A 0.5 A 0.5 A
Maximum drain-source on-resistance 2.5 Ω 2.5 Ω 2.5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
JESD-609 code e6 e6 e6
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 1 W 1 W 1 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Tin/Bismuth (Sn/Bi) TIN BISMUTH TIN BISMUTH
Terminal form FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 20 20
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
Brand Name - Renesas Renesas
Parts packaging code - UPAK UPAK
Manufacturer packaging code - PLZZ0004CA-A4 PLZZ0004CA-A4
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