2SK1775
Silicon N Channel MOS FET
REJ03G0973-0200
(Previous: ADE-208-1320)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
D
G
1. Gate
2. Drain
3. Source
S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1775
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Tch
*1
Ratings
900
±30
8
20
8
60
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
*2
Tstg
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
900
±30
—
—
2.0
—
3.5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
1.2
5.5
1730
700
310
25
135
185
130
0.9
900
Max
—
—
±10
250
3.0
1.6
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 720 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 4 A, V
GS
= 10 V*
I
D
= 4 A, V
DS
= 20 V*
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 4 A, V
GS
= 10 V,
R
L
= 7.5
Ω
3
3
I
F
= 8 A, V
GS
= 0
I
F
= 8 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1775
Main Characteristics
Power vs. Temperature Derating
90
50
30
Maximum Safe Operation Area
Channel Dissipation Pch (W)
60
Drain Current I
D
(A)
10
3
1
0.3
0.1
0.05
30
µ
s
is
o n )
n a
(
tio re
DS
10
ra s a y R
0
PW
µ
s
pe thi d b
1
O n e
=
D
m
t
i i
C
10
s
lim
O
m
pe
s
ra
(1
tio
Sh
n
ot
(T
)
c
=
25
°
C
)
10
Ta = 25°C
1
3
10
30
100
300
1000
0
50
100
150
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10
10 V
6V
5V
6
Pulse Test
10
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
8
8
V
DS
= 20 V
Pulse Test
6
4
4.5 V
4
75°C
T
C
= 25°C
2
V
GS
= 4 V
2
–25°C
0
10
20
30
40
50
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
I
D
= 10 A
12
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
V
GS
= 10 V
2
1
0.5
0.2
0.1
0.05
0.2
Pulse Test
15 V
Drain to Source Saturation Voltage V
DS (on)
(V)
8
5A
4
2A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0
4
8
12
16
20
0.5
1.0
2
5
10
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1775
Static Drain to Source on State
Resistance vs. Temperature
5
V
GS
= 10 V
Pulse Test
5A
I
D
= 10 A
2
2A
1
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
10
5
V
DS
= 20 V
Pulse Test
–25°C
T
C
= 25°C
75°C
4
3
2
1
0.5
0.2
0.1
0.05
0
–40
0
40
80
120
160
0.1
0.2
0.5
1
2
5
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
5,000
10,000
di/dt = 100 A/µs,
Ta = 25°C, V
GS
= 0
Pulse Test
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time t rr (ns)
2,000
1,000
500
Capacitance C (pF)
Ciss
1,000
Coss
100
V
GS
= 0
f = 1 MHz
10
Crss
200
100
50
0.1
0.2
0.5
1
2
5
10
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
1,000
V
DD
= 600 V
800
400 V
250 V
600
V
DS
V
GS
12
16
20
500
Switching Characteristics
Gate to Source Voltage V
GS
(V)
Switching Time t (ns)
200
100
50
t
r
t
d (off)
t
f
400
600 V
400 V
V
DD
= 250 V
20
40
60
I
D
= 8 A
8
t
d (on)
20
10
5
0.1
.
V
GS
= 10 V, V
DD
= 30 V
.
PW = 5
µs,
duty < 1%
0.2
0.5
1
2
5
10
200
4
0
0
80
100
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1775
Reverse Drain Current vs.
Source to Drain Voltage
10
Reverse Drain Current I
DR
(A)
Pulse Test
8
6
4
2
5 V, 10 V
V
GS
= 0, –5 V
0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance
γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
0.5
0.3
0.1
0.2
0.1
0.05
T
C
= 25°C
1.0
θch–c
(t) =
γ
S
(t)
• θch–c
θch–c
= 2.08°C/W, T
C
= 25°C
P
DM
PW
1
D = PW
T
0.03
0.01
10
µ
0.02
0.01
e
Puls
hot
1S
100
µ
1m
10 m
100 m
T
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Waveforms
90%
Vout Monitor
Vin
D.U.T
10%
10%
90%
90%
t
d (off)
t
f
10%
R
L
50
Ω
Vin
10 V
V
DD
.
= 30 V
.
Vout
t
d (on)
t
r
Rev.2.00 Sep 07, 2005 page 5 of 6
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