2SK1838(L), 2SK1838(S)
Silicon N Channel MOS FET
REJ03G0980-0300
Rev.3.00
Nov 21, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-A
(Package name: DPAK(L)-(1))
4
D
4
G
1. Gate
2. Drain
3. Source
4. Drain
S
1
2
3
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
1
2
3
Rev.3.00 Nov 21, 2005 page 1 of 7
2SK1838(L), 2SK1838(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)*1
I
DR
Pch
*2
Tch
Tstg
Ratings
250
±30
1
2
1
10
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
|y
fs
|
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
250
±30
—
—
2.0
0.3
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.5
5.5
60
30
5
5
6
10
4.5
0.96
160
Max
—
—
±10
50
3.0
—
8.0
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 200 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 0.5 A *
3
I
D
= 0.5 A, V
GS
= 10 V *
3
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
GS
= 10 V, I
D
= 0.5 A,
R
L
= 60
Ω
I
F
= 1 A, V
GS
= 0
I
F
= 1 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.3.00 Nov 21, 2005 page 2 of 7
2SK1838(L), 2SK1838(S)
Main Characteristics
Power vs. Temperature Derating
20
10
3
1
0.3
0.1
0.03
Ta = 25°C
D
10
0
C
1
=
m
s
O
10
pe
s
ra
tio
ms
(
n
(T
1 s
ho
c
=
25
t)
°
C
)
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
15
10
µ
PW
s
µ
10
5
Operation in this area
is limited by R
DS
(on)
0
50
100
150
200
0.01
1
3
10
30
100
300
1000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
1.0
8V
10 V
6V
5V
Pulse Test
Typical Transfer Characteristics
1.0
Pulse Test
V
DS
= 10 V
Drain Current I
D
(A)
Drain Current I
D
(A)
0.8
0.8
0.6
4.5 V
0.6
0.4
4V
0.4
0.2
V
GS
= 3.5 V
0.2
Tc = 75°C
25°C
– 25°C
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
V
GS
= 10 V
Drain to Source Saturation Voltage V
DS (on)
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
4
20
10
5
3
0.5 A
2
0.2 A
2
1
0.5
0.02
1
I
D
= 0.1 A
0
4
8
12
16
20
0.05
0.1
0.2
0.5
1
2
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.3.00 Nov 21, 2005 page 3 of 7
2SK1838(L), 2SK1838(S)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
25
Pulse Test
V
GS
= 10 V
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
5
Pulse Test
V
DS
= 10 V
20
2
1
Tc = – 25 C
15
I
D
= 0.5 A
0.5
0.2
0.1
0.05
0.02
25 C
75 C
10
0.1 A
5
0.2 A
0
– 40
0
40
80
120
160
0.05 0.1
0.2
0.5
1
2
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
1000
1000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time t rr (ns)
500
Capacitance C (pF)
200
100
50
di / dt = 100 A /
µ
s
V
GS
= 0, Ta = 25 C
100
Ciss
Coss
10
Crss
20
10
0.05
1
0
10
20
0.1
0.2
0.5
1
2
5
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
500
I
D
= 0.5 A
Switching Characteristics
20
100
Gate to Source Voltage V
GS
(V)
V
GS
Switching Time t (ns)
400
16
50
tf
td (off)
V
GS
= 10 V, V
DD
= 30 V
PW = 2
µs,
duty
≤
1 %
300
V
DD
= 200 V
V
DS
100 V
50 V
12
20
10
5
200
8
td (on)
tr
100
V
DD
= 200 V
100 V
50 V
4
2
1
0.05
0
0
4
8
12
16
20
0.1
0.2
0.5
1
2
5
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.3.00 Nov 21, 2005 page 4 of 7
2SK1838(L), 2SK1838(S)
Reverse Drain Current vs.
Source to Drain Voltage
1.0
Reverse Drain Current I
DR
(A)
Pulse Test
0.8
0.6
0.4
0.2
V
GS
= 10 V
0, – 5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance
γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
Tc = 25°C
1.0
0.5
0.3
0.1
0.2
0.1
0.05
0.02
tP
sho
ulse
0.03
0.01
10
µ
1
θ
ch – c(t) =
γ
s(t)
• θ
ch – c
θ
ch – c = 12.5°C / W. Tc = 25°C
PW
D= T
P
DM
T
PW
0.01
100
µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Vout Monitor
D.U.T
R
L
Vin
10 V
50
Ω
Vin
Vout
10 %
Waveforms
90 %
10 %
10 %
.
.
V
DD
=
30 V
90 %
td (on)
tr
90 %
td (off)
tf
Rev.3.00 Nov 21, 2005 page 5 of 7
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