2SK1933
Silicon N Channel MOS FET
REJ03G0984-0300
(Previous: ADE-208-1332)
Rev.3.00
Apr 27, 2006
Application
High speed power switching
Features
•
•
•
•
Low on-resistance
High speed switching
No secondary breakdown
Suitable for switching regulator
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
3
1
2
Rev.3.00 Apr 27, 2006 page 1 of 6
2SK1933
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
900
±30
10
30
10
150
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 1. Pulse Test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
900
±30
—
—
2.0
—
4.5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.9
7
2620
830
320
30
140
285
170
0.9
1600
Max
—
—
±10
250
3.0
1.2
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 720 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 5 A, V
GS
= 10 V*
1
I
D
= 5 A, V
DS
= 20 V*
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 5 A, V
GS
= 10 V,
R
L
= 6
Ω
I
F
= 10 A, V
GS
= 0
I
F
= 10 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.3.00 Apr 27, 2006 page 2 of 6
2SK1933
Main Characteristics
Power vs. Temperature Derating
200
50
30
Maximum Safe Operation Area
Channel Dissipation Pch (W)
10
µ
s
0
10
Drain Current I
D
(A)
lim in Op
ite this era
d a tio
by re n
R a is
D
S
(o
n)
150
10
D
C
µ
s
PW
=
10
1
s
m
3
1
0.3
0.1
0.05
s
m
O
pe
100
(1
Sh
ot
t
ra
io
n
c
(T
)
=
°
C
25
50
)
0
50
100
150
200
1
3
10
30
100
300 1000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10
10 V
6V
5V
6
4
4V
2
V
GS
= 3.5 V
0
10
20
30
40
50
0
10
Typical Transfer Characteristics
Pulse Test
V
DS
= 20 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
8
8
6
4
2
Tc = 25°C
75°C
–25°C
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
1.0
0.8
0.6
5A
0.4
0.2
2A
I
D
= 1 A
0
4
8
12
16
20
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
10
5
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
2
1
0.5
0.2
0.1
0.5
V
GS
= 10 V
1
2
5
10
20
50
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.3.00 Apr 27, 2006 page 3 of 6
2SK1933
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
2.5
2.0
1.5
1.0
0.5
0
–40
Pulse Test
V
GS
= 10 V
I
D
= 5 A
2A
1A
50
20
10
5
2
1
0.5
0.1
Tc = 25°C
–25°C
75°C
Pulse Test
V
DS
= 20 V
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
0
40
80
120
160
0.2
0.5
1
2
5
10
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
5000
10000
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
Capacitance C (pF)
2000
1000
500
200
100
50
0.1
Ciss
1000
Coss
di/dt = 100 A/
µ
s, V
GS
= 0
Ta = 25°C
100
Crss
V
GS
= 0
f = 1 MHz
10
0.2
0.5
1
2
5
10
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
V
GS
V
DD
= 250 V
400 V
600 V
V
DS
I
D
= 8 A
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
16
12
8
4
0
500
td(off)
1000
800
600
400
200
Switching Time t (ns)
200
100
50
20
10
5
0.2
V
GS
= 10 V, V
DD
= 30 V
PW = 5
µs,
duty
≤
1 %
tf
tr
td(on)
V
DD
= 250 V
400 V
600 V
40
80
120
160
200
0
0.5
1
2
5
10
20
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.3.00 Apr 27, 2006 page 4 of 6
2SK1933
Reverse Drain Current vs.
Source to Drain Voltage
10
Reverse Drain Current I
DR
(A)
Pulse Test
8
6
4
2
V
GS
= 10 V
0, –5 V
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance
γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
0.5
0.3
0.1
0.2
0.1
T
C
= 25°C
1.0
0.05
0.02
θch–c
(t) =
γ
S
(t) ·
θch–c
θch–c
= 0.83°C/W, T
C
= 25°C
P
DM
se
0.03
0.01
1S
h
ul
ot P
T
100
µ
1m
10 m
100 m
PW
1
D = PW
T
0.01
10
µ
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Vout Monitor
D.U.T
R
L
50
Ω
Vin
10 V
Vin
Vout
10%
10%
Waveforms
90%
10%
90%
t
d (off)
V
DD
.
= 30 V
.
t
d (on)
90%
t
r
t
f
Rev.3.00 Apr 27, 2006 page 5 of 6
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