2SK1957
Silicon N Channel MOS FET
REJ03G0988-0200
(Previous: ADE-208-1336)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter, motor control
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1957
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch*
Tch
2
1
Ratings
200
±20
7
28
7
30
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
Tstg
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
200
±20
—
—
2.0
—
3.0
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.33
4.5
700
260
45
20
45
50
35
1.1
150
Max
—
—
±10
250
4.0
0.45
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
=160 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 4 A, V
GS
= 10 V*
I
D
= 4 A, V
DS
= 10 V*
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 4 A, V
GS
= 10 V,
R
L
= 7.5
Ω
3
3
I
F
= 7 A, V
GS
= 0
I
F
= 7 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1957
Main Characteristics
Power vs. Temperature Derating
60
50
30
Maximum Safe Operation Area
10
0
s
µ
Channel Dissipation Pch (W)
ar
(o ea
n)
Drain Current I
D
(A)
O
is per
lim ati
ite on
d b in
y R this
D
S
10
PW
1
=
10
n
m
s
c
s
(1
=
s
µ
10
3
1
0.3
0.1
40
D
C
O
pe
m
ra
tio
(T
Sh
o
t)
)
20
25
°
C
Ta = 25°C
3
10
30
100 300 1000
0
50
100
150
0.05
1
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10
10
10 V
6V
5.5 V
Pulse Test
5V
4.5 V
4V
V
GS
= 3.5 V
Typical Transfer Characteristics
Drain Current I
D
(A)
8
6
4
2
Drain Current I
D
(A)
8
6
4
Pulse Test
V
DS
= 10 V
75°C
2
Tc = 25°C
2
4
6
–25°C
0
4
8
12
16
20
0
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
2.0
1.6
1.2
0.8
0.4
5A
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
10
5
2
1
0.5
0.2
0.1
0.5
15 V
Pulse Test
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
V
GS
= 10 V
2A
I
D
= 1 A
0
4
8
12
16
20
1
2
5
10
20
50
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1957
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
1.0
0.8
0.6
0.4
0.2
0
–40
Pulse Test
I
D
= 5 A
50
20
10
5
2
1
0.5
0.1
Tc = 25°C
–25°C
75°C
V
DS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
1 A, 2 A
0
40
80
120
160
0.2
0.5
1
2
5
10
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
500
1000
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
Ciss
Capacitance C (pF)
200
100
50
20
10
5
0.2
di/dt = 100 A/
µ
s, V
GS
= 0
Ta = 25°C
100
Coss
10
V
GS
= 0
f = 1 MHz
1
Crss
0.5
1
2
5
10
20
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
V
GS
V
DD
= 150 V
100 V
50 V
I
D
= 7 A
V
DS
V
DD
= 150 V
100 V
50 V
8
16
24
32
Switching Characteristics
Gate to Source Voltage V
GS
(V)
20
16
12
8
4
0
40
500
V
GS
= 10 V, V
DD
= 30 V
PW = 2
µs,
duty
≤
1 %
500
400
300
200
100
Switching Time t (ns)
200
100
50
20
10
5
0.1 0.2
tf
t
d(
on)
t
d(off)
tr
0
0.5
1
2
5
10
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1957
Reverse Drain Current vs.
Source to Drain Voltage
10
Reverse Drain Current I
DR
(A)
Pulse Test
8
6
4
2
V
GS
= 10 V
0, –5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance
γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
0.5
0.3
0.1
0.05
0.02
0.01
ulse
tP
Sho
1.0
T
C
= 25°C
0.2
0.1
θch–c
(t) =
γ
S
(t)
• θch–c
θch–c
= 4.17°C/W, T
C
= 25°C
P
DM
PW
D = PW
T
0.03
1
T
1m
10 m
100 m
0.01
10
µ
100
µ
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Vout Monitor
D.U.T.
R
L
Vout
Vin
10 V
50
Ω
.
V
DD
= 30 V
.
t
d (on)
Vin
10%
10%
Waveforms
90%
10%
90%
t
d (off)
t
f
90%
t
r
Rev.2.00 Sep 07, 2005 page 5 of 6
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