2SK2007
Silicon N Channel MOS FET
REJ03G0991-0200
(Previous: ADE-208-1339)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No Secondary Breakdown
Suitable for switching regulator, DC - DC converter, motor control
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Drain
(Flange)
3. Source
1
2
S
3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK2007
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
250
±30
20
80
20
100
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
250
±30
—
—
2.0
—
9.0
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.12
14
2340
1000
160
30
125
190
100
1.2
120
Max
—
—
±10
250
3.0
0.15
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100
µA, V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
=200 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 10 A, V
GS
= 10 V*
3
I
D
= 10 A, V
DS
= 10 V*
3
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 10 A, V
GS
= 10 V,
R
L
= 3
Ω
I
F
= 20 A, V
GS
= 0
I
F
= 20 A, V
GS
= 0,
di
F
/ dt = 100 A /
µs
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK2007
Main Characteristics
Power vs. Temperature Derating
150
100
30
1
Maximum Safe Operation Area
10
0
10
Channel Dissipation Pch (W)
µ
µ
s
s
Drain Current I
D
(A)
PW
m
s
100
10
3
1
0.3
=
O
pe
ra
tio
n
(T
Operation in this
c
=
area is limited
25
°
C
by R
DS(on)
)
D
C
10
m
s
(1
o
sh
t)
50
Ta = 25°C
0.1
0
50
100
150
1
3
10
30
100 300 1000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
40
30
20
10
V
GS
= 4 V
Typical Transfer Characteristics
50
10 V
8V
Pulse Test
V
DS
= 10 V
Drain Current I
D
(A)
Drain Current I
D
(A)
6V
40
30
20
10
Pulse Test
5.5 V
5V
–25°C
Tc = 25°C
75°C
0
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
5
4
3
2
1
20 A
10 A
I
D
= 5 A
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
2
1
0.5
V
GS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.2
0.1
15 V
0.05
1
2
5
10
20
50
100
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK2007
Static Drain to Source on State
Resistance vs. Temperature
0.5
0.4
0.3
I
D
= 20 A
0.2
0.1
0
–40
5A
10 A
V
GS
= 10 V
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
100
–25°C
30
10
3
1
0.3
0.1
0.1
75°C
V
DS
= 10 V
Pulse Test
Tc = 25°C
Pulse Test
0
40
80
120
160
0.3
1
3
10
30
100
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
500
200
100
50
20
10
5
0.5
1
1
2
5
10
20
50
0
di/dt = 100 A/
µ
s
V
GS
= 0, Ta = 25°C
10000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
Ciss
1000
Coss
100
V
GS
= 0
Crss
f = 1 MHz
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
500
I
D
= 20 A
Switching Characteristics
20
16
12
8
500
400
300
200
100
0
0
V
DD
= 50 V
100 V
200 V
Switching Time t (ns)
200
100
50
20
10
5
0.5
tr
td(off)
tf
td(on)
V
DD
= 200 V
100 V
50 V
20
40
60
80
4
0
100
:
V
GS
= 10 V,
V
DD
=30 V
PW = 5
µ
s, duty
<
1%
=
1
2
5
10
20
50
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK2007
Reverse Drain Current vs.
Source to Drain Voltage
50
Reverse Drain Current I
DR
(A)
40
Pulse Test
30
20
10
10 V
V
GS
= 0, –5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance
γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0
D=1
0.5
0.3
0.1
0.2
T
C
= 25°C
0.1
0.05
θch–c
(t) =
γ
S
(t)
• θch–c
θch–c
= 1.25°C/W, T
C
= 25°C
P
DM
PW
1
D = PW
T
0.02
0.03
0.01
Pulse
hot
1S
T
1m
10 m
100 m
0.01
10
µ
100
µ
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Vout Monitor
D.U.T
Vin
10%
Waveforms
90%
R
L
50
Ω
Vin
10 V
V
DD
.
= 30 V
.
Vout
10%
90%
90%
t
d (off)
10%
t
d (on)
t
r
t
f
Rev.2.00 Sep 07, 2005 page 5 of 6
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