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2SK2225

Description
2 A, 1500 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size73KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

2SK2225 Overview

2 A, 1500 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET

2SK2225 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTO-3PFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage1500 V
Maximum drain current (ID)2 A
Maximum drain-source on-resistance12 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)7 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SK2225
Silicon N Channel MOS FET
REJ03G1005-0200
(Previous: ADE-208-140)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
High breakdown voltage (V
DSS
= 1500 V)
High speed switching
Low drive current
No Secondary breakdown
Suitable for switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
D
1. Gate
2. Drain
3. Source
G
S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 6
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