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2SK2315TYTL-E

Description
Silicon N Channel MOS FET
CategoryDiscrete semiconductor    The transistor   
File Size80KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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2SK2315TYTL-E Overview

Silicon N Channel MOS FET

2SK2315TYTL-E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-62
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)2 A
Maximum drain current (ID)2 A
Maximum drain-source on-resistance0.45 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1 W
Maximum pulsed drain current (IDM)4 A
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website:
http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to
http://www.renesas.com/inquiry.

2SK2315TYTL-E Related Products

2SK2315TYTL-E 2SK2315 2SK2315TYTR-E
Description Silicon N Channel MOS FET Silicon N Channel MOS FET Silicon N Channel MOS FET
package instruction SMALL OUTLINE, R-PSSO-F3 UPAK-3 LEAD FREE, SC-62, UPAK-3
Contacts 3 3 4
Reach Compliance Code unknow compli compli
ECCN code EAR99 EAR99 EAR99
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V
Maximum drain current (Abs) (ID) 2 A 2 A 2 A
Maximum drain current (ID) 2 A 2 A 2 A
Maximum drain-source on-resistance 0.45 Ω 0.45 Ω 0.45 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 1 W 1 W 1 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
Is it Rohs certified? conform to - conform to
Parts packaging code SC-62 - UPAK
Peak Reflow Temperature (Celsius) NOT SPECIFIED - 260
Maximum pulsed drain current (IDM) 4 A - 4 A
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED

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